2SD2257 - описание и поиск аналогов

2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) Low saturation voltage VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 1

isc Silicon NPN Darlington Power Transistor 2SD2257 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1.5A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Complement to Type 2SB1495 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications Hammer drive, p

Ordering number EN3741A NPN Triple Diffused Planar Silicon Transistor 2SD2251 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2251] On-chip damper diode. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Base 1

Ordering number EN3320 NPN Triple Diffused Planar Silicon Transistor 2SD2252 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit mm Color display horizontal deflection output. 2039D [2SD2252] 16.0 5.6 Features 3.4 3.1 High-speed tf=100ns. High breakdown voltage VCBO=1500V. High r

Transistor 2SD2258 (Tentative) Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.5 0.5 2.5 0.5 1 2 3 Absolute Maximum Ratings (Ta=25 C) Note In a

Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1490 20.0 0.5 5.0 0.3 3.0 Features Optimum for 80W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Transistor 2SD2258 (Tentative) Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.5 0.5 2.5 0.5 1 2 3 Absolute Maximum Ratings (Ta=25 C) Note In a

Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3

Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1492 20.0 0.5 5.0 0.3 3.0 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm Complementary to 2SB1493 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3

2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features High breakdown voltage and high current (VCEO = 120 V, IC = 25 A) Built-in C-E diode Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SD2256 Absolute Maximum Ratings (Ta = 25 C) Item

2SD2253 Silicon NPN Triple Diffused Power Transistor GENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV High Speed Switching Applications TO-3PM QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-Base voltage VCB0 - - 1700 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 6 A Collector curren

isc Silicon NPN Darlington Power Transistor 2SD2250 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 6A, V = 5V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 6A, I = 6mA) CE(sat) C B Complement to Type 2SB1490 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Power Transistor 2SD2251 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION High DC Current Gain hFE= 2000(Min.)@ IC= 12A, VCE= 4V High Collector-Emitter Breakdown Voltage- V(BR)CEO = 120V(Min) APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD2253 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL