2SD249 - описание и поиск аналогов

2SD2499 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

2SD2498 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2498 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.4 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATI

2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features Isolated package TO-126FM Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD2491 2SD2492 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to b

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2493 DESCRIPTION With TO-3PN package Complement to type 2SB1624 APPLICATIONS Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PA

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 DESCRIPTION With TO-3PML package Complement to type 2SB1625 APPLICATIONS Audio, Series regulator General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Tc=25 ) SYMBOL PARAMETER CONDITI

Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION With TO-220F package Complement to type 2SB1626 APPLICATIONS For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARA

Equivalent circuit C B Darlington 2SD2493 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1624) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) 2SD2493 Symbol 2SD2493 Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCB

C Equivalent circuit B Darlington 2SD2494 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1625) Application Audio, Series Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol 2SD2494 Unit Symbol Conditions 2SD2494 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

C Equivalent circuit B Darlington 2SD2495 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1626) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2495 Symbol Conditions 2SD2495 Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2490 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High DC current gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio ,re

isc Silicon NPN Power Transistor 2SD2499 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon NPN Darlington Power Transistor 2SD2493 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1624 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2494 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1625 Minimum Lot-to-Lot variations for robust device performance and reliable op

isc Silicon NPN Darlington Power Transistor 2SD2495 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1626 Minimum Lot-to-Lot variations for robust device performance and reliable op