2SD256 - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD256 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR) CEO Collector Power Dissipation- P = 25W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU

2SD2568 Transistors Power Transistor(400V,0.5A) 2SD2568 Features 1) High breakdown voltage.(BVCEO=400V) Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 0.5 A 10 Collector power dissipation PC W(Tc=25 C) Junction temperature Tj 150 C St

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 0.65 max. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automat

Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 0.65 max. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automat

Equivalent circuit C B Darlington 2SD2561 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1648) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Symbol Symbol 2SD2561 Unit Conditions 2SD2561 Unit 0.2 6.0 0.3 36.4 ICBO VCBO 150 V VCB=150

Equivalent circuit C B Darlington 2SD2562 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1649) Application Audio, Series Regulator and General Purpose Absolute maximum ratings Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) (Ta=25 C) Symbol 2SD2562 Unit Symbol Conditions 2SD2562 Unit 0.2 0.2 5.5 15.6 VCBO 150 V ICBO VCB

Equivalent circuit C B Darlington 2SD2560 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2560 Unit Symbol Conditions 2SD2560 Unit 0.2 4.8 0.4 15.6 VCBO 150 V ICBO VC

isc Silicon NPN Darlington Power Transistor 2SD2561 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 10A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 10mA) CE(sat) C B Complement to Type 2SB1648 Minimum Lot-to-Lot variations for robust device performance and reliable

isc Silicon NPN Darlington Power Transistor 2SD2562 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 10A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 10mA) CE(sat) C B Complement to Type 2SB1649 Minimum Lot-to-Lot variations for robust device performance and reliable

isc Silicon NPN Darlington Power Transistor 2SD2560 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 10A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 10mA) CE(sat) C B Complement to Type 2SB1647 Minimum Lot-to-Lot variations for robust device performance and reliable