Биполярный транзистор 2SD27
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD27
Тип материала: Ge
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.28
W
Макcимально допустимое напряжение коллектор-база (Ucb): 32
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 0.5
MHz
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO1
Аналоги (замена) для 2SD27
2SD27
Datasheet (PDF)
0.1. Size:329K toshiba
2sd2719.pdf 
2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2719 Solenoid Drive Applications Unit: mm Motor Drive Applications High DC current gain: h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V
0.2. Size:70K rohm
2sd2702.pdf 
2SD2702 Transistors General purpose amplification (12V, 1.5A) 2SD2702 Dimensions (Unit : mm) Application Low frequency amplifier Features 1) A collector current is large. 2) Collector saturation voltage is low.
0.3. Size:1231K rohm
2sd2707.pdf 
2SD2707DatasheetGeneral Purpose Transistor (50V, 150mA)lOutlinel SOT-723 Parameter Value SC-105AA VCEO50VIC150mAVMT3lFeatures lInner circuitl l1)High DC current gain.2)High emitter-base voltage. (VCBO=12V)3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA)lApplicationlLOW FREQENCY AMPLIFIER, DRIVER
0.4. Size:1568K rohm
2sd2703.pdf 
2SD2703DatasheetGeneral purpose amplification (30V, 1A)lOutlinel SOT-323T Parameter Value VCEO30VIC1ATUMT3lFeatures lInner circuitl l1)A collector current is large.2)Collector-Emitter saturation voltage is low. VCE(sat)350mV at IC=500mA/IB=25mAlApplicationlLOW FREQUENCY AMPLIFIER
0.5. Size:987K rohm
2sd2704k.pdf 
For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 SOT-3462.9 1.12) High emitter-base voltage. VEBO = 25V (Min.) 0.4 0.83) Low Ron (3) Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor ( ) ( )2 10.95 0.95 (1) Emitter0.15(2) Base1.9 (3) Collector Each lea
0.6. Size:144K rohm
2sd2704k 2sd2705k.pdf 
For Muting (20V, 0.3A) 2SD2704K / 2SD2705S Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 2.9 1.12) High emitter-base voltage. 0.4 0.8 VEBO = 25V (Min.) (3)3) Low Ron Ron= 0.7 (Typ.) (2) (1)Structure 0.95 0.95 (1) Emitter0.15Epitaxial planar type (2) Base1.9 (3) CollectorNPN silicon transistor Each lead ha
0.7. Size:91K rohm
2sd2701.pdf 
2SD2701 Transistors Low frequency amplifier 2SD2701 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA ROHM : TUMT3 Abbreviated symbol : FZ (1) Base(2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limit
0.8. Size:92K rohm
2sd2700.pdf 
2SD2700 Transistors Low frequency amplifier 2SD2700 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM : TUMT3 Abbreviated symbol : FW (1) Base(2) Emitter (3) Collector Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base volta
0.9. Size:85K rohm
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf 
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit : mm) 1) High DC current gain. 2SD27072) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.20.2 0.8 0.2(Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2)(3)(1)(1) Base
Другие транзисторы... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
