2SD283 - аналоги, параметры транзистора - Справочник транзисторов

2SD283 даташит

9.1. Size:33K wingshing
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2SD288 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * TO-220 ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 8 0 V Collector-Emitter Voltage VCEO 55 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25oC) PC 20 W o Junction Temperature Tj 150 C o C Storage Temperat

9.2. Size:189K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD289 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLU

9.3. Size:216K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD288 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Collector Power Dissipation- P = 25W(Max)@ T = 25 C C APPLICATIONS Designed for power regulator, low frequency high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V CBO V Collector-E

Другие транзисторы: 2SD26C, 2SD27, 2SD271, 2SD272, 2SD273, 2SD274, 2SD28, 2SD280, 13009, 2SD284, 2SD285, 2SD286, 2SD287, 2SD287A, 2SD287B, 2SD287C, 2SD288