2SD299 - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD299 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 4.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABS

Low VCE(sat) transistor(80V,0.7A) 2SD2908 FEATURES Pb Low VCE(sat). Lead-free Excellent DC current gain characteristics. Complements the 2SB1386 SOT-89 ORDERING INFORMATION Type No. Marking Package Code 2SD2908 AHQ/AHR SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 50 V Collector-Emitter Voltag

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD291 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR) CEO Collector Power Dissipation- P = 18W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD2901 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 900V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD297 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Collector Power Dissipation- P = 25W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMU