2SD314 - описание и поиск аналогов

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD314 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB508 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to

UNISONIC TECHNOLOGIES CO., LTD 2SD313 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD313L-x-TA3-T 2SD313G-x-TA3-T TO-220 B C E Tube 2SD313L-x-TF3-T 2SD313G-x-

A A A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A 3. EMITTER DC Current Gain hFE=40 320@IC=1A Complementray to PNP 2SB507 Equivalent Circuit 2SD313=Device code Solid dot=Green moldinn com

2SD313(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40 320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltag

2SD313 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 Features 1 BASE 2 * DC Current Gain hFE = 40-320 @IC = 1.0A 3 1 * Low VCE(sat) 1.0V(MAX) @IC = 2.0A, IB = 0.2A 1. BASE 2. COLLECTOR * Complememtary to NPN 2SB507 3. EMITTER 3 TO-220 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector to Base Voltage 60 V VCE

2SD313(BR3DD313R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features Low Current Low Voltage. / Applications Low frequency power amplifier applications. / Equivalent Circuit

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD317 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching a

isc Silicon NPN Power Transistor 2SD313 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB507 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD316 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 5.0A CE(sat) C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier a

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD312 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 600V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter

isc Silicon NPN Power Transistor 2SD311 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD318 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching a

isc Silicon NPN Power Transistor 2SD315 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB509 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD310 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UN