2SD321 - параметры, поиск аналогов, даташиты транзистора

2SD321 Datasheet (PDF)

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3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55~150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB

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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD320DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 230V(Min)(BR) CEOExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage-: V )= 2.0V(Max)@ I = 2ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose

9.4. Size:213K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD325DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 35V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 1.5ACE(sat) CComplement to Type 2SB511Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.Rec

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .