2SD321 - аналоги, параметры транзистора - Справочник транзисторов

2SD321 даташит

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2sd328.pdf pdf_icon

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3da325 2sd325.pdf pdf_icon

3DA325(2SD325) NPN PCM TC=25 1.75 W ICM 1.5 A Tjm 150 Tstg -55 150 VCE=10V Rth 71 /W IC=0.3A V(BR)CBO ICB=1mA 35 V V(BR)CEO ICE=1mA 35 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.1 A IEBO VCE=5.0V 1.0 A VBEsat 1.5 IC=1.5A V IB

9.3. Size:194K inchange semiconductor
2sd320.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD320 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 2.0V(Max)@ I = 2A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose

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2sd325.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD325 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.5A CE(sat) C Complement to Type 2SB511 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. Rec

Другие транзисторы: 2SD316A, 2SD317, 2SD317A, 2SD318, 2SD318A, 2SD319, 2SD32, 2SD320, 2SD669, 2SD322, 2SD323, 2SD324, 2SD325, 2SD325C, 2SD325D, 2SD325E, 2SD325F