2SD334A - аналоги, параметры транзистора - Справочник транзисторов

2SD334A даташит

8.1. Size:206K inchange semiconductor
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isc Silicon NPN Power Transistor 2SD334 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 110

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2sd330.pdf pdf_icon

Ordering number 397E PNP/NPN Triple Diffused Planar Silicon Transistors 2SB514/2SD330 50V/2A Low-Frequency Power Amplifier Applications Features Package Dimensions Especially suited for use in output stage of 10W AF unit mm Power amplifier. 2010C Complementary pair with the 2SB514 and 2SD313. [2SB514/2SD330] JEDEC TO-220AB 1 Base ( ) 2SB514 EIAJ SC-46 2 Collector

9.2. Size:189K inchange semiconductor
2sd331.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD331 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 2.0A CE(sat) C Complement to Type 2SB515 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output sta

9.3. Size:197K inchange semiconductor
2sd339.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD339 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 90V(Min) (BR) CEO Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- V )= 1.0V(Max)@ I = 7.5A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpos