2SD343 datasheet, аналоги, основные параметры

Наименование производителя: 2SD343

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 35 W

Макcимально допустимое напряжение коллектор-база (Ucb): 70 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: TO220

 Аналоги (замена) для 2SD343

- подборⓘ биполярного транзистора по параметрам

 

2SD343 даташит

 ..1. Size:188K  inchange semiconductor
 2sd343.pdf pdf_icon

2SD343

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

 9.1. Size:180K  inchange semiconductor
 2sd348.pdf pdf_icon

2SD343

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD348 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and switching appl

 9.2. Size:199K  inchange semiconductor
 2sd347.pdf pdf_icon

2SD343

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier a

 9.3. Size:188K  inchange semiconductor
 2sd345.pdf pdf_icon

2SD343

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD345 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 55V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.6V(Max) @I = 2.0A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: 2SD339-2, 2SD34, 2SD340, 2SD340-1, 2SD340-2, 2SD341, 2SD341H, 2SD342, D882, 2SD344, 2SD345, 2SD346, 2SD347, 2SD348, 2SD349, 2SD35, 2SD350