Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD350A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For color TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD350DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers and switching appl

isc Silicon NPN Power Transistor 2SD357DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB527Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV