Биполярный транзистор 2SD38
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD38
Тип материала: Ge
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12
V
Макcимальный постоянный ток коллектора (Ic): 0.15
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 0.5
MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO7
Аналоги (замена) для 2SD38
2SD38
Datasheet (PDF)
0.4. Size:69K wingshing
2sd389.pdf 
2SD389 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB507ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction
0.5. Size:212K inchange semiconductor
2sd389.pdf 
isc Silicon NPN Power Transistor 2SD389DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.6. Size:202K inchange semiconductor
2sd380.pdf 
isc Silicon NPN Power Transistor 2SD380DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
0.7. Size:212K inchange semiconductor
2sd386.pdf 
isc Silicon NPN Power Transistor 2SD386DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 1.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25
0.8. Size:191K inchange semiconductor
2sd382.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD382DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOComplement to Type 2SB537Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE
0.9. Size:125K inchange semiconductor
2sd386 2sd386a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION With TO-220C package High voltage :VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU
0.10. Size:213K inchange semiconductor
2sd381.pdf 
isc Silicon NPN Power Transistors 2SD381DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOComplement to Type 2SB536Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25
0.11. Size:184K inchange semiconductor
2sd388.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD388DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V (Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(T
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