2SD381. Аналоги и основные параметры
Наименование производителя: 2SD381
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 130 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 60 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO220
Аналоги (замена) для 2SD381
- подборⓘ биполярного транзистора по параметрам
2SD381 даташит
9.3. Size:69K wingshing
2sd389.pdf 
2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction
9.4. Size:212K inchange semiconductor
2sd389.pdf 
isc Silicon NPN Power Transistor 2SD389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
9.5. Size:202K inchange semiconductor
2sd380.pdf 
isc Silicon NPN Power Transistor 2SD380 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
9.6. Size:212K inchange semiconductor
2sd386.pdf 
isc Silicon NPN Power Transistor 2SD386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
9.7. Size:191K inchange semiconductor
2sd382.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Complement to Type 2SB537 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier, low speed switching. Suitable for driver of 60 100 watts audio amplifier. ABSOLUTE
9.8. Size:125K inchange semiconductor
2sd386 2sd386a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION With TO-220C package High voltage VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU
9.9. Size:184K inchange semiconductor
2sd388.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD388 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T
Другие транзисторы: 2SD376, 2SD376A, 2SD377, 2SD378, 2SD379, 2SD38, 2SD380, 2SD380A, 2SC2240, 2SD382, 2SD383, 2SD384, 2SD385, 2SD386, 2SD386A, 2SD387, 2SD387A
