2SD387 - описание и поиск аналогов

2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junction

isc Silicon NPN Power Transistor 2SD389 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SD380 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

isc Silicon NPN Power Transistor 2SD386 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 1.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD382 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Complement to Type 2SB537 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier, low speed switching. Suitable for driver of 60 100 watts audio amplifier. ABSOLUTE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A DESCRIPTION With TO-220C package High voltage VCBO=200V(min) APPLICATIONS For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD388 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V (Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T