Биполярный транзистор 2SD404G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD404G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO220
2SD404G Datasheet (PDF)
2sd401a.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base
2sd401.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter
2sd400 to-92mod.pdf
2SD400 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Low-Frequency power Amp, Electronic Governor Applications 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage 25 V 13.800VCEO Collector-Emitter Voltage 25 V 14.200VE
2sd400 to-92l.pdf
2SD400 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 Low-Frequency power Amp, Electronic Governor Applications 8.2000.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 25 V 13.80014.200VCEO Collector-Emitter Voltage 25 V VEBO Emi
2sd400.pdf
2SD400(BR3DG400L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High Voltage ,low. Current. / Applications Low frequency power amplifier, electronic governor applications.
2sd402.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOCollector Power Dissipation-: P = 30W(Max)@ T = 25C CComplement to Type 2SB547Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV vertical defl
2sd401a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401A DESCRIPTION With TO-220C package Complement to type 2SB546A Collector current IC=2A Collector-collector voltage:VCEO=150V(Min) APPLICATIONS For use in general purpose power amplifier, vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mount
2sd401.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD401 DESCRIPTION With TO-220C package Complement to type 2SB546 Collector current IC=2A Collector-base voltage VCBO=200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050