Справочник транзисторов. 2N236B

 

Биполярный транзистор 2N236B - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N236B
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 90 °C
   Граничная частота коэффициента передачи тока (ft): 0.1 MHz
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO3

 Аналоги (замена) для 2N236B

 

 

2N236B Datasheet (PDF)

 9.1. Size:291K  motorola
2n2369 2n2369re.pdf

2N236B
2N236B

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N2369/DSwitching Transistors2N2369NPN Silicon*2N2369ACOLLECTOR3*Motorola Preferred Device2BASE1EMITTER321MAXIMUM RATINGSRating Symbol Value UnitCASE 2203, STYLE 1CollectorEmitter Voltage VCEO 15 VdcTO18 (TO206AA)CollectorEmitter Voltage VCES 40 VdcCollectorBase Voltage

 9.2. Size:52K  philips
2n2369.pdf

2N236B
2N236B

DISCRETE SEMICONDUCTORSDATA SHEETM3D1252N2369NPN switching transistor1997 Jun 20Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor 2N2369FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 15 V).1 emitter2 baseAPPLICATIO

 9.3. Size:524K  central
2n2369a.pdf

2N236B
2N236B

2N2369Awww.centralsemi.comNPN SILICON TRANSISTORDESCRIPTION:The CENTRAL SEMICONDUCTOR 2N2369A is an epitaxial planar NPN Silicon Transistor designed for ultra high speed saturated switching applications.MARKING: FULL PART NUMBERTO-18 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCES 40 VCollector-Emitter Voltage VC

 9.4. Size:248K  cdil
p2n2369.pdf

2N236B
2N236B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON HIGH SPEED SWITHCHING TRANSISTORS P2N2369TO-92Plastic PackageECBLOW POWER FOR HIGH SPEED SWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 15 VVCBOCollector Base Voltage 40 VC

 9.5. Size:250K  cdil
p2n2369a.pdf

2N236B
2N236B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company P2N2369ANPN SILICON HIGH SPEED SWITHCHING TRANSISTOR TO - 92 Plastic PackageECBLOW POWER AND HIGH SPEED SWITCHING APPLICATIONSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITVCEOCollector Emitter Voltage 15 VVCBOCollector Base Voltage 4

 9.6. Size:213K  cdil
2n2369 a.pdf

2N236B
2N236B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N23692N2369ATO-18APPLICATIONS2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 15 VCollec

 9.7. Size:66K  microsemi
2n4449 2n2369a.pdf

2N236B
2N236B

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO

Другие транзисторы... 2N2369-51 , 2N2369A , 2N2369ACSM , 2N2369ADCSM , 2N2369AQF , 2N2369AUB , 2N2369CSM , 2N236A , BC546 , 2N237 , 2N2370 , 2N2371 , 2N2372 , 2N2373 , 2N2374 , 2N2375 , 2N2376 .

 

 
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