Справочник транзисторов. 2SD535

 

Биполярный транзистор 2SD535 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD535
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 45
   Корпус транзистора: TO3

 Аналоги (замена) для 2SD535

 

 

2SD535 Datasheet (PDF)

 ..1. Size:199K  inchange semiconductor
2sd535.pdf

2SD535
2SD535

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD535DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high power application

 9.1. Size:196K  inchange semiconductor
2sd534.pdf

2SD535
2SD535

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD534DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,andother general high-cur

 9.2. Size:195K  inchange semiconductor
2sd536.pdf

2SD535
2SD535

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD536DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converters.General

 9.3. Size:201K  inchange semiconductor
2sd531.pdf

2SD535
2SD535

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD531DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max.) @ I = 4.0ACE(sat) CWith TO-220C PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power ampli

 9.4. Size:197K  inchange semiconductor
2sd533.pdf

2SD535
2SD535

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD533DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)Excellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, conv

Другие транзисторы... 2SD52A , 2SD53 , 2SD530 , 2SD531 , 2SD531-1 , 2SD532 , 2SD533 , 2SD534 , 2SD669A , 2SD536 , 2SD537 , 2SD538 , 2SD538A , 2SD539 , 2SD539A , 2SD53A , 2SD54 .

 

 
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