Биполярный транзистор 2SD556 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD556
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 120 W
Макcимально допустимое напряжение коллектор-база (Ucb): 110 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3
2SD556 Datasheet (PDF)
2sd556.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD556DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V (Min)(BR)CEOWide Area of Safe OperationHigh PowerHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(
2sd557.pdf
isc Silicon NPN Power Transistor 2SD557DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sd553.pdf
isc Silicon NPN Power Transistor 2SD553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V(Max) @I = 4ACE(sat) CComplement to Type 2SB553Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applicati
2sd552.pdf
isc Silicon NPN Power Transistor 2SD552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB552Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATING
2sd551.pdf
isc Silicon NPN Power Transistor 2SD551DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOComplement to Type 2SB681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor AF power amplifier applications.Recommended for use in output stage of 80 watts poweramplifier .ABSOLUTE
2sd554.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD554DESCRIPTIONContunuous Collector Current-I = 2ACPower Dissipation-P =30W @T = 25D CCollector-Emitter Saturation Voltage-: V )= 2.0 V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifi
2sd555.pdf
isc Silicon NPN Power Transistor 2SD555DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V (Min)(BR)CEOHigh Power DissipationComplement to Type 2SB600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current and high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
2sd550.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD550DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.8V(Max)@I = 5ACE(sat) CWith TO-66 PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching ap
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050