2SD568Y - описание и поиск аналогов

 8.1. Size:213K  inchange semiconductor
 2sd568.pdf 

isc Silicon NPN Power Transistor 2SD568 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM R

 9.1. Size:90K  nec
 2sd560.pdf 

DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is Ordering Name Package ideal for direct driving from the IC output of devices such

 9.2. Size:209K  fuji
 2sd560.pdf 

 9.3. Size:209K  inchange semiconductor
 2sd560.pdf 

isc Silicon NPN Darlington Power Transistor 2SD560 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000(Min) @I = 3.0A FE C Low Saturation Voltage Complement to Type 2SB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and l

 9.4. Size:213K  inchange semiconductor
 2sd569.pdf 

isc Silicon NPN Power Transistor 2SD569 DESCRIPTION High Collector Current I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@I = 5A CE(sat) C Complement to Type 2SB708 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low-speed switching applications. ABSOLUTE MAXIMUM RA