Справочник транзисторов. 2SD639

 

Биполярный транзистор 2SD639 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD639
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.6 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 135 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 85
   Корпус транзистора: SC71

 Аналоги (замена) для 2SD639

 

 

2SD639 Datasheet (PDF)

 ..1. Size:44K  1
2sd639.pdf

2SD639
2SD639

Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute

 9.1. Size:315K  1
2sd636 2sd637.pdf

2SD639
2SD639

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

 9.2. Size:167K  toshiba
2sd633 2sd635.pdf

2SD639
2SD639

 9.3. Size:51K  panasonic
2sd637 e.pdf

2SD639
2SD639

Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45

 9.4. Size:46K  panasonic
2sd637.pdf

2SD639
2SD639

Transistor2SD637Silicon NPN epitaxial planer typeFor low-power general amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45

 9.5. Size:44K  panasonic
2sd638 e.pdf

2SD639
2SD639

Transistor2SD638, 2SD639Silicon NPN epitaxial planer typeFor medium-power general amplificationUnit: mmComplementary to 2SB643 and 2SB6446.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute

 9.6. Size:127K  mospec
2sd633-35.pdf

2SD639
2SD639

AAA

 9.7. Size:207K  inchange semiconductor
2sd635.pdf

2SD639
2SD639

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD635DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB675Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p

 9.8. Size:197K  inchange semiconductor
2sd632.pdf

2SD639
2SD639

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD632DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Excellent Safe Operating Area100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifier,and switchingpower supply drivers appl

 9.9. Size:207K  inchange semiconductor
2sd633.pdf

2SD639
2SD639

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD633DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB673Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p

 9.10. Size:207K  inchange semiconductor
2sd634.pdf

2SD639
2SD639

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD634DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SB674Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, p

 9.11. Size:86K  inchange semiconductor
2sd633 2sd635.pdf

2SD639
2SD639

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION With TO-220C package Complement to type 2SB673/675 DARLINGTON High DC current gain Low saturation voltage APPLICATIONS High power switching Hammer drive,pulse motor drive PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emit

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top