2SD657 - аналоги, параметры транзистора - Справочник транзисторов

2SD657 даташит

..1. Size:196K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD657 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Excellent Safe Operating Area 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier,and switching power supply drivers appl

9.1. Size:29K hitachi
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2SD655 Silicon NPN Epitaxial Application Low frequency power amplifier, Muting Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD655 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak current iC(peak) 1.0 A

9.2. Size:589K blue-rocket-elect
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2SD655(BR3DG655K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features Low frequency. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base PIN 2

9.3. Size:199K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD651 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications.