Биполярный транзистор 2SD715 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD715
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 110 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 110 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 18000
Корпус транзистора: TOP3
2SD715 Datasheet (PDF)
2sd715.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD715DESCRIPTIONHigh DC Current Gain: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power am
2sd718.pdf
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage
2sd711.pdf
2SD711 FUJI POWER TRANSISTORTRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTON
2sd716.pdf
2SD716 SILICON EPITAXIAL PLANAR TRANSISTORGENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 100 VCollector-emitter voltage (open base)VCEO - 100 VCollector curre
2sd717.pdf
Silicon Epitaxial Planar Transistor2SD717GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 70 VCBOCollector-emitter voltage (open base)V - 70 VCEOCollector
2sd718.pdf
NPN Silicon NPN Triple Diffused Transistor R 2SD718 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltageV =110V (min) CEO CEOV =180V (min) V =180V (min) CEO CEO 2SB688 Complementary to 2SB688
2sd718 to3p.pdf
SEMICONDUCTOR2SD718TECHNICAL DATANPN EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATIONFEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte
2sd718r 2sd718o.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
2sd717o 2sd717y.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CAPPLICATIONSHigh power switching applicationsDC-DC converter and DC-AC inverter application
2sd711.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD711DESCRIPTIONHigh DC Current GainLow Collector Saturation VoltageExcellent Safe Operating AreaHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlsInverterschoppersSwitching regulatorsG
2sd718.pdf
isc Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicati
2sd716.pdf
isc Silicon NPN Power Transistor 2SD716DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V (Max)@I = 4ACE(sat) CComplement to Type 2SB686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 30~35W high-fid
2sd717.pdf
isc Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicat
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050