2SD715 - описание и поиск аналогов

 ..1. Size:194K  inchange semiconductor
 2sd715.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD715 DESCRIPTION High DC Current Gain h = 2000(Min)@ I = 1A FE C Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power am

 9.1. Size:106K  utc
 2sd718.pdf 

UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage

 9.2. Size:309K  fuji
 2sd711.pdf 

 9.3. Size:118K  mospec
 2sd718.pdf 

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 9.4. Size:89K  wingshing
 2sd716.pdf 

2SD716 SILICON EPITAXIAL PLANAR TRANSISTOR GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 100 V Collector-emitter voltage (open base) VCEO - 100 V Collector curre

 9.5. Size:88K  wingshing
 2sd717.pdf 

Silicon Epitaxial Planar Transistor 2SD717 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3P(I)D QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 70 V CBO Collector-emitter voltage (open base) V - 70 V CEO Collector

 9.6. Size:610K  jilin sino
 2sd718.pdf 

 9.7. Size:252K  first silicon
 2sd718 to3p.pdf 

SEMICONDUCTOR 2SD718 TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45 50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte

 9.8. Size:195K  cn sptech
 2sd718r 2sd718o.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.9. Size:196K  cn sptech
 2sd717o 2sd717y.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C APPLICATIONS High power switching applications DC-DC converter and DC-AC inverter application

 9.10. Size:184K  inchange semiconductor
 2sd711.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD711 DESCRIPTION High DC Current Gain Low Collector Saturation Voltage Excellent Safe Operating Area High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor controls Inverters choppers Switching regulators G

 9.11. Size:218K  inchange semiconductor
 2sd718.pdf 

isc Silicon NPN Power Transistor 2SD718 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SB688 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicati

 9.12. Size:219K  inchange semiconductor
 2sd716.pdf 

isc Silicon NPN Power Transistor 2SD716 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V (Max)@I = 4A CE(sat) C Complement to Type 2SB686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 30 35W high-fid

 9.13. Size:218K  inchange semiconductor
 2sd717.pdf 

isc Silicon NPN Power Transistor 2SD717 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V (Max)@I = 6.0A CE(sat) C High Collector Power Dissipation P = 80W @T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applicat