Биполярный транзистор 2SD716
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD716
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60
W
Макcимально допустимое напряжение коллектор-база (Ucb): 100
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 6
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 6
MHz
Ёмкость коллекторного перехода (Cc): 100
pf
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора:
TO247
Аналоги (замена) для 2SD716
2SD716
Datasheet (PDF)
..1. Size:89K wingshing
2sd716.pdf 
2SD716 SILICON EPITAXIAL PLANAR TRANSISTORGENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 100 VCollector-emitter voltage (open base)VCEO - 100 VCollector curre
..2. Size:219K inchange semiconductor
2sd716.pdf 
isc Silicon NPN Power Transistor 2SD716DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V (Max)@I = 4ACE(sat) CComplement to Type 2SB686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 30~35W high-fid
9.1. Size:106K utc
2sd718.pdf 
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage
9.2. Size:309K fuji
2sd711.pdf 
2SD711 FUJI POWER TRANSISTORTRIPLE DIFFUSED PLANER TYPEHIGH POWER DARLINGTON
9.4. Size:88K wingshing
2sd717.pdf 
Silicon Epitaxial Planar Transistor2SD717GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeTO-3P(I)DQUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 70 VCBOCollector-emitter voltage (open base)V - 70 VCEOCollector
9.5. Size:610K jilin sino
2sd718.pdf 
NPN Silicon NPN Triple Diffused Transistor R 2SD718 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =110V (min) High collector voltageV =110V (min) CEO CEOV =180V (min) V =180V (min) CEO CEO 2SB688 Complementary to 2SB688
9.6. Size:252K first silicon
2sd718 to3p.pdf 
SEMICONDUCTOR2SD718TECHNICAL DATANPN EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATIONFEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte
9.7. Size:195K cn sptech
2sd718r 2sd718o.pdf 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
9.8. Size:196K cn sptech
2sd717o 2sd717y.pdf 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CAPPLICATIONSHigh power switching applicationsDC-DC converter and DC-AC inverter application
9.9. Size:184K inchange semiconductor
2sd711.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD711DESCRIPTIONHigh DC Current GainLow Collector Saturation VoltageExcellent Safe Operating AreaHigh Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlsInverterschoppersSwitching regulatorsG
9.10. Size:218K inchange semiconductor
2sd718.pdf 
isc Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicati
9.11. Size:218K inchange semiconductor
2sd717.pdf 
isc Silicon NPN Power Transistor 2SD717DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.4V (Max)@I = 6.0ACE(sat) CHigh Collector Power Dissipation: P = 80W @T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicat
9.12. Size:194K inchange semiconductor
2sd715.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD715DESCRIPTIONHigh DC Current Gain: h = 2000(Min)@ I = 1AFE CCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)High Reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power am
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