INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD730DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 12AFE CLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 20ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPowe

Ordering number:512FPNP/NPN Epitaxial Planar Silicon Transistor2SB698/2SD7341W AF Output, Electronic Governor, DC-DC Converter ApplicationsPackage Dimensionsunit:mm2003A[2SB698/2SD734]JEDEC : TO-92 B : Base( ) : 2SB698 for audio 1W output.EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD731DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB695Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitch

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD73DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION With TO-3 package Complement to type 2SB697/697K High power dissipation APPLICATIONS Power amplifier applications Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simpli

isc Silicon NPN Power Transistor 2SD732DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Current CapabilityComplement to Type 2SB696Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Co

isc Silicon NPN Power Transistor 2SD733DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V (Min)(BR)CEOHigh Current CapabilityComplement to Type 2SB697Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Co