2SD780V6 - Даташиты. Аналоги. Основные параметры

RoHS 2SD780/2SD780A SOT-23-3L 2SD780/2SD780A TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 80 0. 05 1. 60 0. 05 Collector current ICM 0.3 A Collector-base voltage V(BR)CBO 60 V 2SD780 V(BR)CBO 80 V 2SD780A Operating and storage junction temperature range TJ, Tstg -55 to +150 E

SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC Product specification 2SD780A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Micro package. High DC current gain. hFE 200TYP.(VCE=1.0V,IC=50mA). 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

SMD Type Transistors NPN Transistors 2SD780 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High DC current gain Complimentary to 2SB736 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO

SMD Type Transistors NPN Transistors 2SD780A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High DC current gain Complimentary to 2SB736A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCE