Биполярный транзистор 2SD781 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD781
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO126
2SD781 Datasheet (PDF)
2sd780 2sd780a.pdf
RoHS 2SD780/2SD780ASOT-23-3L 2SD780/2SD780A TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25) 2. 80 0. 051. 60 0. 05 Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 60 V 2SD780 V(BR)CBO: 80 V 2SD780A Operating and storage junction temperature range TJ, Tstg: -55 to +150 E
2sd787 2sd788.pdf
2SD787, 2SD788Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB738 and 2SB739OutlineTO-92MOD1. Emitter2. Collector3. Base3212SD787, 2SD788Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SD787 2SD788 UnitCollector to base voltage VCBO 20 20 VCollector to emitter voltage VCEO 16 20 VEmitter to base voltage VEBO
2sd789.pdf
2SD789Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB740OutlineTO-92MOD1. Emitter2. Collector3. Base3212SD789Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6VCollector current IC 1ACollector
2sd780a.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specification2SD780ASOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesMicro package.High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating
2sd780.pdf
SMD Type TransistorsNPN Transistors2SD780SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High DC current gain Complimentary to 2SB7361 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO
2sd780a.pdf
SMD Type TransistorsNPN Transistors2SD780ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High DC current gain Complimentary to 2SB736A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCE
2sd783.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD783DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050