2SD790 datasheet, аналоги, основные параметры
Наименование производителя: 2SD790 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 70 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: TO92
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2SD790 даташит
9.1. Size:125K toshiba
2sd797.pdf 
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9.2. Size:258K toshiba
2sd799.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.6. Size:81K jmnic
2sd799.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD799 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS Igniter applications High voltage switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum rating
9.7. Size:76K jmnic
2sd798.pdf 
Product Specification www.jmnic.com Silicon Power Transistors 2SD798 DESCRIPTION DARLINGTON High voltage With TO-220 package APPLICATIONS With switching and igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 emitter Fig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL PARAMETER CONDITIONS MAX UNIT VCB
9.8. Size:324K lge
2sd794-2sd794a.pdf 
2SD794/2SD794A TO-126C Transistor (NPN) TO-126C 1. EMITTER 2. COLLECTOR 1 2 3 3. BASE Features High voltage and Large current capacity Complementary to 2SB744,2SB744A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 3.000 7.800 3.400 8.200 1.800 Collector-Emitter Voltage 2SD794 45 2.200 VCEO V 4.040
9.9. Size:182K cn sptech
2sd797.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD797 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability APPLICATIONS High power amplifier applications. High Power switching applications. DC-DC converter applications. Regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
9.10. Size:204K inchange semiconductor
2sd797.pdf 
isc Silicon NPN Power Transistor 2SD797 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High Power switching applications. DC-DC converter applications. Regulator ap
9.11. Size:210K inchange semiconductor
2sd799.pdf 
isc Silicon NPN Darlington Power Transistor 2SD799 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min.) (BR)CEO High DC Current Gain h = 600(Min.) @I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
9.12. Size:214K inchange semiconductor
2sd795.pdf 
isc Silicon NPN Power Transistor 2SD795 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.7V(Max) @I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUT
9.13. Size:212K inchange semiconductor
2sd798.pdf 
isc Silicon NPN Darlington Power Transistor 2SD798 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1500(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use
9.14. Size:214K inchange semiconductor
2sd794.pdf 
isc Silicon NPN Power Transistor 2SD794 DESCRIPTION High Collector Current -I = 3A C Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO Complement to Type 2SB744 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
9.15. Size:202K inchange semiconductor
2sd792.pdf 
isc Silicon NPN Power Transistor 2SD792 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V
9.16. Size:187K inchange semiconductor
2sd793.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD793 DESCRIPTION Collector-Emitter BreakdownVoltage- V = 30V(Min.) (BR)CEO Low Collector to Emitter Saturation Voltage V = 2.0V(Max.)@I = 1.5A CE(sat) C Excellent h linearity FE Complement to Type 2SB743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed
9.17. Size:148K inchange semiconductor
2sd794-a 2sd794 2sd794a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION With TO-126 package Complement to type 2SB744/744A High current 3A Excellent hFE linearity APPLICATIONS For use in audio frequency amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas
Другие транзисторы: 2SD784, 2SD785, 2SD786, 2SD787, 2SD788, 2SD789, 2SD78A, 2SD79, A1013, 2SD792, 2SD793, 2SD794, 2SD794A, 2SD794AO, 2SD794AR, 2SD794AY, 2SD794O
