isc Silicon NPN Power Transistor 2SD794DESCRIPTIONHigh Collector Current -I = 3ACCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOComplement to Type 2SB744Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio frequency amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION With TO-126 package Complement to type 2SB744/744A High current 3A Excellent hFE linearity APPLICATIONS For use in audio frequency amplifier and general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas

2SD794/2SD794A TO-126C Transistor (NPN)TO-126C1. EMITTER 2. COLLECTOR 1 2 3 3. BASE Features High voltage and Large current capacity Complementary to 2SB744,2SB744A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 70 V 3.0007.8003.4008.200 1.800Collector-Emitter Voltage 2SD794 45 2.200VCEO V 4.040

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD799 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS Igniter applications High voltage switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol Absolute maximum rating

Product Specification www.jmnic.com Silicon Power Transistors 2SD798 DESCRIPTION DARLINGTON High voltage With TO-220 package APPLICATIONS With switching and igniter applications PINNING PIN DESCRIPTION1 Base 2 Collector;connected tomounting base 3 emitterFig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL PARAMETER CONDITIONS MAX UNITVCB

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD797DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityAPPLICATIONSHigh power amplifier applications.High Power switching applications.DC-DC converter applications.Regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SD797DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplifier applications.High Power switching applications.DC-DC converter applications.Regulator ap

isc Silicon NPN Darlington Power Transistor 2SD799DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V (Min.)(BR)CEOHigh DC Current Gain: h = 600(Min.) @I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon NPN Power Transistor 2SD795DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 0.7V(Max) @I = 2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and low speedswitching applications.ABSOLUT

isc Silicon NPN Darlington Power Transistor 2SD798DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1500(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use

isc Silicon NPN Power Transistor 2SD792DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD793DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = 30V(Min.)(BR)CEOLow Collector to Emitter Saturation Voltage: V = 2.0V(Max.)@I = 1.5ACE(sat) CExcellent h linearityFEComplement to Type 2SB743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned