2SD794 - Даташиты. Аналоги. Основные параметры

isc Silicon NPN Power Transistor 2SD794 DESCRIPTION High Collector Current -I = 3A C Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO Complement to Type 2SB744 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION With TO-126 package Complement to type 2SB744/744A High current 3A Excellent hFE linearity APPLICATIONS For use in audio frequency amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Bas

2SD794/2SD794A TO-126C Transistor (NPN) TO-126C 1. EMITTER 2. COLLECTOR 1 2 3 3. BASE Features High voltage and Large current capacity Complementary to 2SB744,2SB744A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 70 V 3.000 7.800 3.400 8.200 1.800 Collector-Emitter Voltage 2SD794 45 2.200 VCEO V 4.040

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD799 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS Igniter applications High voltage switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum rating

Product Specification www.jmnic.com Silicon Power Transistors 2SD798 DESCRIPTION DARLINGTON High voltage With TO-220 package APPLICATIONS With switching and igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 emitter Fig.1 simplified outline (TO-220) and symbol LIMITING VALUES SYMBOL PARAMETER CONDITIONS MAX UNIT VCB

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD797 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability APPLICATIONS High power amplifier applications. High Power switching applications. DC-DC converter applications. Regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc Silicon NPN Power Transistor 2SD797 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplifier applications. High Power switching applications. DC-DC converter applications. Regulator ap

isc Silicon NPN Darlington Power Transistor 2SD799 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min.) (BR)CEO High DC Current Gain h = 600(Min.) @I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon NPN Power Transistor 2SD795 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.7V(Max) @I = 2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUT

isc Silicon NPN Darlington Power Transistor 2SD798 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1500(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

isc Silicon NPN Power Transistor 2SD792 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD793 DESCRIPTION Collector-Emitter BreakdownVoltage- V = 30V(Min.) (BR)CEO Low Collector to Emitter Saturation Voltage V = 2.0V(Max.)@I = 1.5A CE(sat) C Excellent h linearity FE Complement to Type 2SB743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed