2SD820 datasheet и подбор замены

 ..1. Size:192K  wingshing
 2sd820.pdf 

2SD820 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope , primarily for use in switching power circuites of colour television receivers TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Collector-emitter voltage (open base) VCEO - 6

 ..2. Size:203K  inchange semiconductor
 2sd820.pdf 

isc Silicon NPN Power Transistor 2SD820 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.1. Size:646K  sanyo
 2sd823.pdf 

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 9.2. Size:132K  sanyo
 2sd826.pdf 

Ordering number EN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions Low saturation voltage. unit mm High hFE. 2009A Large current capacity. [2SD826] 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2 Collector 3 Base 2.4 SANYO TO-126 4.8 Specifications Absolute Maximum Ratings at Ta = 2

 9.3. Size:208K  inchange semiconductor
 2sd823.pdf 

isc Silicon NPN Power Transistor 2SD823 DESCRIPTION Collector Current I = 6A C Collector-Emitter Breakdown Voltage- V = 90V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

 9.4. Size:203K  inchange semiconductor
 2sd822.pdf 

isc Silicon NPN Power Transistor 2SD822 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.5. Size:203K  inchange semiconductor
 2sd821.pdf 

isc Silicon NPN Power Transistor 2SD821 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Collector Saturation Voltage- V = 5.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.6. Size:215K  inchange semiconductor
 2sd826.pdf 

isc Silicon NPN Power Transistor 2SD826 DESCRIPTION Large Current Capability-I = 5A C High DC Current Gain- h = 120-560 @ I = 0.5A FE C Low Saturation Voltage - V = 0.5V(Max)@ I = 3A, I = 60mA CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts aud