Биполярный транзистор 2SD854
Даташит. Аналоги
Наименование производителя: 2SD854
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10
W
Макcимально допустимое напряжение коллектор-база (Ucb): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 2.2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 50
MHz
Ёмкость коллекторного перехода (Cc): 30
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
TO39
Аналог (замена) для 2SD854
-
подбор ⓘ биполярного транзистора по параметрам
2SD854
Datasheet (PDF)
9.6. Size:189K wingshing
2sd850.pdf 
Silicon Diffused Power Transistor2SD850GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic package primarily for use in horizontal deflection circuites of colour television receiversTO-3QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCESMCollector-emitter voltage (open base)
9.7. Size:150K inchange semiconductor
2sd850.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD850 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
9.8. Size:212K inchange semiconductor
2sd855.pdf 
isc Silicon NPN Power Transistor 2SD855DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB760Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
9.9. Size:208K inchange semiconductor
2sd857.pdf 
isc Silicon NPN Power Transistor 2SD857DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB762Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
9.10. Size:213K inchange semiconductor
2sd856.pdf 
isc Silicon NPN Power Transistor 2SD856DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB761Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.11. Size:212K inchange semiconductor
2sd859.pdf 
isc Silicon NPN Power Transistor 2SD859DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
9.12. Size:217K inchange semiconductor
2sd858.pdf 
isc Silicon NPN Power Transistor 2SD858DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
Другие транзисторы... 2SD846
, 2SD847
, 2SD848
, 2SD848A
, 2SD849
, 2SD850
, 2SD851
, 2SD852
, 2SC945
, 2SD855
, 2SD855A
, 2SD855B
, 2SD856
, 2SD856A
, 2SD856B
, 2SD857
, 2SD857A
.
History: RT1N141S
| BF823S
| 2SA203
| AC185VII
| BCR521
| HA7206
| BDT60BF
