2SD884 datasheet, аналоги, основные параметры
Наименование производителя: 2SD884 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 330 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO220
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Аналоги (замена) для 2SD884
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2SD884 даташит
..1. Size:174K cn sptech
2sd884.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD884 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.5A CE(sat) C High speed switching APPLICATIONS Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
..2. Size:208K inchange semiconductor
2sd884.pdf 
isc Silicon NPN Power Transistor 2SD884 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.5A CE(sat) C High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applications
9.1. Size:106K st
2sd882.pdf 
2SD882 NPN medium power transistor Features High current Low saturation voltage Complement to 2SB772 Applications 1 Voltage regulation 2 3 Relay driver SOT-32 Generic switch (TO-126) Audio power amplifier DC-DC converter Figure 1. Internal schematic diagram Description The device is a NPN transistor manufactured by using planar technology r
9.3. Size:305K mcc
2sd882-gr-r-o-y.pdf 
2SD882-R MCC Micro Commercial Components TM 2SD882-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SD882-Y Phone (818) 701-4933 2SD882-GR Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulat
9.5. Size:178K utc
2sd880.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834 ORDERING INFORMATION Ordering Number
9.6. Size:237K utc
2sd882.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
9.7. Size:23K utc
2sd882l.pdf 
UTC 2SD882L NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772L APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-92L 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collecto
9.8. Size:184K utc
2sd882s.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 FEATURES SOT-223 SOT-89 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS 1 * Audio power amplifier TO-92 * DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing
9.11. Size:403K jiangsu
2sd886.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SD886 TRANSISTOR (NPN) TO 126 FEATURES 1. EMITTER Low Voltage High Current 2. COLLECTOR 3. BASE Equivalent Circuit D886=Device code Solid dot = Green molding compound device, if none, the normal device D886 XXX XXX=Code ORDERING INFORMATION Part Number Package P
9.12. Size:200K jiangsu
2sd880.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SD880 TRANSISTOR (NPN) TO-220-3L FEATURES Low Frequency Power Amplifier 1. BASE 2. COLLECTOR Complement to 2SB834 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V
9.13. Size:258K lge
2sd880.pdf 
2SD880(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low frequency power amplifier Complement to 2SB834 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collect
9.14. Size:516K wietron
2sd880.pdf 
2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES 3 1 * Low frequency power amplifier 1. BASE 2. COLLECTOR * Complement to 2SB834 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Bas
9.15. Size:170K wietron
2sb776 2sd886.pdf 
2SB776 2SD886 2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors TO-126 1.EMITTER P b Lead(Pb)-Free 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB776 Unit NPN/2SD886 VCEO -50 50 V Collector-Emitter Voltage VCBO -50 50 V Collector-Base Voltage VEBO -5.0 5.0 V Emitter-Base Voltage IC -3.0 3.0 A Collector Curren
9.16. Size:687K wietron
2sb772 2sd882.pdf 
2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead(Pb)-Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol PNP/2SB772 Unit NPN/2SD882 VCEO -30 30 Vdc Collector-Emitter Voltage VCBO -40 40 Vdc Collector-Base Voltage VEBO -5.0 5.0 Vdc Emitter-Base Voltage IC(DC) -3.0 3.0 Adc Collector Current(DC) IC(Pulse) -7.0 7.0 Adc
9.17. Size:664K jilin sino
2sd880.pdf 
NPN NPN Epitaxial Silicon Transistor R 2SD880 APPLICATIONS Audio frequency power amplifer applications FEATURES High DC Current Gain 2SB834 Complementary to 2SB834 RoHS RoHS product Package TO-220 TO-220C DPAK ORDER ME
9.19. Size:804K blue-rocket-elect
2sd882i.pdf 
2SD882I(BR3DA882I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features V ,h CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. / Applications 3 , ,
9.21. Size:994K blue-rocket-elect
2sd882.pdf 
2SD882 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features V ,h CE(sat) FE Low saturation voltage, excellent hFE linearity and high hFE. / Applications 3 , ,
9.26. Size:871K blue-rocket-elect
2sd882d.pdf 
2SD882D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features V ,h CE(sat) FE Low saturation voltage,excellent hFE linearity and high hFE. / Applications 3 , ,
9.27. Size:535K semtech
st2sd882u.pdf 
ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T
9.28. Size:297K semtech
st2sd882u-p.pdf 
ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector
9.29. Size:439K semtech
st2sd882ht.pdf 
ST 2SD882HT NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector C
9.30. Size:386K semtech
st2sd882t.pdf 
ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Collector C
9.31. Size:132K lrc
l2sd882q.pdf 
LESHAN RADIO COMPANY, LTD. PNPSURFACEMOUNTTRANSISTOR L2SB882Q L2SB882P We declare that the material of product compliance with RoHS requirements. 4 1 2 3 DEVICE MARKING AND ORDERING INFORMATION SOT-89 Device Marking Shipping L2SB882Q 82Q 2500/Tape&Reel 2,4 L2SB882P 82P 2500/Tape&Reel COLLECTOR 1 MAXIMUM RATINGS(Ta=25 C) BASE Parameter Symbol Limits Unit 3 Collector-bas
9.32. Size:643K cn wxdh
2sd882.pdf 
2SD882 NPN Epitaxial Silicon Transistor 1 Description B VCB = 40V The 2SD882 is a medium power low voltagetransistor B VCE = 30V 2 Features I = 3A C High current output up to 3A Low saturation voltage Complement to 2SB772 3 Applications audio power amplifier, DC-DC converter voltage regulator. 4 Electrical Characteristics 4.1 Absolute Maximum Ratings (
9.33. Size:52K kexin
2sd882.pdf 
Transistors SMD Type Transistors NPN Silicon Power Transistor 2SD882 TO-252 Features Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Collector Power Dissipation PC=1.25W +0.8 5.30+0.2 0.50-0.7 -0.2 Collector Current IC=3A 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
9.34. Size:52K kexin
2sd882-252.pdf 
Transistors SMD Type Transistors NPN Silicon Power Transistor 2SD882 TO-252 Features Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Collector Power Dissipation PC=1.25W +0.8 5.30+0.2 0.50-0.7 -0.2 Collector Current IC=3A 0.127 0.80+0.1 max -0.1 2 1 3 2.3 0.60+0.1 -0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
9.35. Size:490K kexin
2sd882a.pdf 
SMD Type Transistors NPN Tr ansistors 2SD882A 1.70 0.1 Features Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = 2 V, IC = 1 A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 70 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 6 V Collector Current to Co
9.36. Size:120K chenmko
2sd882zgp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SD882ZGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-73/SOT-223) SC-73/SOT-223 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time tstg= 1.0uSec (typ.) 1.65+0.15 * PC= 1.5 W (mounted on ceramic substrate). 6.50+0
9.37. Size:108K chenmko
2sd882gp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SD882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.5 W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. *
9.39. Size:5243K msksemi
2sd882-ms.pdf 
www.msksemi.com 2SD882-MS Semiconductor Compiance Semiconductor Compiance 1. BASE TRANSISTOR (NPN) 2. COLLETOR FEATURES Power dissipation 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC C
9.40. Size:1206K msksemi
2sd882.pdf 
www.msksemi.com 2SD882 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES 2 Power Dissipation 1 3 TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Unit Symbol Parameter Value V 40 V CBO Collector-Base Voltage 2. COLLECTOR V 30 V CEO Collector-Emitter Voltage 3 .EMITTER V 6 V EBO Emitter-Base Voltage I 3 A C Collector Current -
9.41. Size:230K pjsemi
2sd882sq-r 2sd882sq-q 2sd882sq-p 2sd882sq-e.pdf 
2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ Applications PIN1 Base PIN 2 Collector PIN 3 Emitter These devices are intended for use in audio frequency power amplifier and low speed switching applications 2C 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S
9.42. Size:564K cn evvo
2sd882-r 2sd882-q 2sd882-p 2sd882-e.pdf 
D882 NPN Transistors Features 3 NPN transistor High current output up to 3A 2 Low Saturation Voltage Complement to 2SB772 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 6 V Collector
9.43. Size:222K cn cbi
2sd882u.pdf 
2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10 ms) ICP 7 A O T
9.44. Size:1081K cn juxing
2sd882sq.pdf 
2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ PIN1 Base PIN 2 Collector PIN 3 Emitter Applications 2C These devices are intended for use in audio frequency power amplifier and low speed switching applications 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S
9.46. Size:480K cn haohai electr
2sd882.pdf 
2SD882 PNP EPITAXIAL SILICON TRANSISTOR 3A, 60V, 2SD882 HD882 TO-126 1000Pcs 1K 10000Pcs 10K 882 2SD882 Series Pin Assignment 2SD882 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The
9.47. Size:222K inchange semiconductor
2sd880.pdf 
isc Silicon NPN Power Transistor 2SD880 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB834 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio frequency power amplifier applicatio
9.48. Size:247K inchange semiconductor
2sd882.pdf 
isc Silicon NPN Power Transistor 2SD882 DESCRIPTION High Collector Current-I = 3.0A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and r
9.49. Size:210K inchange semiconductor
2sd882u-p.pdf 
isc Silicon NPN Power Transistor 2SD882U-P DESCRIPTION High Collector Current-I = 3.0A C Low Saturation Voltage - V = 0.8V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(T
Другие транзисторы: 2SD880Y, 2SD882, 2SD882G, 2SD882O, 2SD882R, 2SD882Y, 2SD883, 2SD883A, 2N3055, 2SD885, 2SD886, 2SD886A, 2SD887, 2SD888, 2SD889, 2SD88A, 2SD890
