INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD898DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection

Ordering number:678F 2SB776 : PNP Epitaxial Planar Silicon Transistor2SD896 : NPN Triple Diffused Planar Silicon Transistor2SB776/2SD896100V/7A, AF 40W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package2022A (Interchangeable with TO-3).[2SB776/2SD896] Wide ASO because of on-c

Ordering number:EN590BNPN Epitaxial Planar Silicon Transistor2SD89425V/1.5A Driver ApplicationsUse Package Dimensions Motor drive, printer hummer drive, relay drive,unit:mmvoltage regulator controller.2009A[2SD894]8.0Features 2.74.0 High DC Current Gain (not less than 4000). Wide ASO.3.0 Low saturation voltage (1.5V max). Large power rating (PC=1

Ordering number:679F 2SB775 : PNP Epitaxial Planar Silicon Transistor2SD895 : NPN Triple Diffused Planar Silicon Transistor2SB775/2SD89585V/6A, AF 35W Output ApplicationsFeatures Package Dimensions Wide ASO because of on-chip ballast resistance.unit:mm Capable of being mounted easily becasuse of one-2022Apoint fixing type plastic molded package[2SB775/2SD895](Inter

Transistor2SD893, 2SD893ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification5.0 0.2 4.0 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer hammer: hFE= 4000 to 20000.A shunt resistor is omitted from the driver.Absolute Maximum Ratings (Ta=25C)+0.2 +0.20.

Transistor2SD892, 2SD892ASilicon NPN epitaxial planer type darlingtonFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesForward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer hammer: hFE= 4000 to 20000.A shunt resistor is omitted from the driver.Absolute Maximum Ratings (Ta=25C)Parameter Sym

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isc Silicon NPN Power Transistor 2SD896DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB776Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 40W audio frequency output applications.ABSOL

isc Silicon NPN Power Transistor 2SD897DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 1ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV deflection circuits.ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD895DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB775Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 35W audio frequency output applications.ABSOLU