Биполярный транзистор 2SD956 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD956
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора: TO3
2SD956 Datasheet (PDF)
2sd956.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD956DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 4.0V(Max.)@ I = 2ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplicati
2sd958.pdf
Transistor2SD958Silicon NPN epitaxial planer typeFor high breakdown voltage and low-noise amplificationUnit: mmComplementary to 2SB7886.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
2sd958 e.pdf
Transistor2SD958Silicon NPN epitaxial planer typeFor high breakdown voltage and low-noise amplificationUnit: mmComplementary to 2SB7886.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High collector to emitter voltage VCEO.Low noise voltage NV.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5
2sd953.pdf
isc Silicon NPN Power Transistor 2SD953DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 4.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM
2sd950.pdf
isc Silicon NPN Power Transistor 2SD950DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM R
2sd951.pdf
isc Silicon NPN Power Transistor 2SD951DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM
2sd959.pdf
isc Silicon NPN Power Transistor 2SD959DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = 0.5V(Max)@I = 2ACE(sat) CComplement to Type 2SB867Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSO
2sd957.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD957DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 4.5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplica
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050