2SD96 datasheet, аналоги, основные параметры
Наименование производителя: 2SD96 📄📄
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 18 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.25 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO1
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Аналоги (замена) для 2SD96
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2SD96 даташит
0.1. Size:39K panasonic
2sd966 e.pdf 
Transistor 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collec
0.2. Size:38K panasonic
2sd968.pdf 
Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SB789 and 2SB789A 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
0.3. Size:36K panasonic
2sd966.pdf 
Transistor 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collec
0.6. Size:42K panasonic
2sd968 e.pdf 
Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SB789 and 2SB789A 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t
0.7. Size:229K utc
2sd965 2sd965a.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD965/A NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965 Collector-Emitter voltage up to 20 V * UTC 2SD965A Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Ordering Number Pin Assi
0.8. Size:18K utc
2sd965.pdf 
UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * Collector-Emitter voltage up to 20 V APPLICATIONS 1 * Audio amplifier * Flash unit of camera * Switching circuit TO-92 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base
0.9. Size:101K secos
2sd965a.pdf 
2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Audio amplifier 1 Flasg unit of camera 2 3 A Switching circuit E C B C E B D CLASSIFICATION OF hFE(2) Rank Q R S F G 230 - 380 Range 340 - 600 560 - 800 H K J L Milli
0.10. Size:335K jiangsu
2sd965a.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier Flash unit of camera 3. EMITTER Switching circuit MARKING 965A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V Collector-
0.11. Size:479K jiangsu
2sd965.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD965 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package 965 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value U
0.12. Size:555K htsemi
2sd965a.pdf 
2SD 965A TRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V 3 Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V IC Collector Current -Continuous 5 A C
0.13. Size:335K htsemi
2sd965.pdf 
2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V
0.14. Size:206K lge
2sd965a.pdf 
2SD965A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 Audio amplifier MIN 0.53 0.40 0.48 0.44 Flash unit of camera 2x) 0.13 B 0.35 0.37 1.5 Switching circuit 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter
0.15. Size:828K wietron
2sd965.pdf 
WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE FEATURES 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 42 V Collector-Emitter Voltage VCEO 22 V Emitter-Base Voltage VEBO 6 V Collector Current -Continu
0.16. Size:250K shenzhen
2sd965a.pdf 
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter V
0.17. Size:1174K blue-rocket-elect
2sd965.pdf 
2SD965 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit / Pinnin
0.18. Size:1175K blue-rocket-elect
2sd965t.pdf 
2SD965T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , Low VCE(sat),high performance. / Applications Audio frequency output amplifier. / Equivalent Circuit
0.19. Size:124K tysemi
2sd965k.pdf 
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V C
0.20. Size:176K tysemi
2sd965-q.pdf 
Product specification 2SD965-Q Unit mm SOT-89 1.50 0.1 4.50 0.1 1.80 0.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44 0.1 0.48 0.1 0.53 0.1 3.00 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
0.21. Size:874K kexin
2sd968.pdf 
SMD Type Transistors NPN Transistors 2SD968 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=100V Complementary to 2SB789 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO
0.22. Size:321K kexin
2sd965a.pdf 
SMD Type Transistors NPN Transistors 2SD965A 1.70 0.1 Features Audio amplifier Flash unit of camera Switching circuit 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C
0.23. Size:893K kexin
2sd968a.pdf 
SMD Type Transistors NPN Transistors 2SD968A SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=120V Complementary to 2SB789A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCE
0.24. Size:1219K kexin
2sd965.pdf 
SMD Type Transistors NPN Transistors 2SD965 1.70 0.1 Features Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V
0.25. Size:382K globaltech semi
gst2sd965.pdf 
GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 22V amplifier and switch. Collector Current 5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)
0.26. Size:3220K slkor
2sd965a-q 2sd965a-r 2sd965a-s.pdf 
2SD965A NPN Transistors 3 Features 2 Low saturation voltage 1.Base 1 Large Collector Power Dissipation and Current 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - Contin
0.27. Size:386K powersilicon
2sd965 2sd965a.pdf 
DATA SHEET 2SD965/965A NPN PLASTIC ENCAPSULATE TRANSISTORS VOLTAGE 20 30 V CURRENT 5 A FEATURES TO-92 SOT-89 LOW VOLTAGE AND HIGH CURRENT EXCELLENT hFE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE 20V FOR 2SD965 COLLECTOR-EMITTER VOLTAGE 30V FOR 2SD965A LEAD FREE AND HALOGEN-FREE E C MECHANICAL DATA E C B B CASE SOT-89, TO-92 SOLDERABILITY MIL-STD-202,
0.28. Size:767K pjsemi
2sd965asq-q 2sd965asq-r 2sd965asq-s.pdf 
2SD965ASQ NPN Transistor Features SOT-89 Low saturation voltage Large Collector Power Dissipation and Current 1. Base 2. Collector 3.Emitter Marking Q AQ R AR S AS Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40 V CBO Collector Emitter Voltage V 30 V CEO Unit Em
0.29. Size:2082K cn shikues
2sd965-r 2sd965-s.pdf 
2SD965 TRANSISTOR (NPN) SOT-89 FEATURES Low Collector-Emitter Saturation Voltage 1. BASE Large Collector Power Dissipation and Current 2. COLLECTOR Mini Power Type Package 3. EMITTER D 965 MARKING MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base
0.30. Size:815K cn hottech
2sd965.pdf 
2SD965 BIPOLAR TRANSISTOR (NPN) FEATURES Large Collector Power Dissipation and Current Low Collector-Emitter Saturation Voltage Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parame
0.31. Size:199K inchange semiconductor
2sd962.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD962 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High DC Current Gain High Reliability Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for series regulators ,
0.32. Size:214K inchange semiconductor
2sd961.pdf 
isc Silicon NPN Power Transistor 2SD961 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = 0.5V(Max)@I = 4A CE(sat) C Complement to Type 2SB869 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSO
0.33. Size:214K inchange semiconductor
2sd960.pdf 
isc Silicon NPN Power Transistor 2SD960 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.5V(Max) @I = 3A CE(sat) C Complement to Type 2SB868 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATI
Другие транзисторы: 2SD953, 2SD954, 2SD955, 2SD956, 2SD957, 2SD957A, 2SD958, 2SD959, TIP41C, 2SD960, 2SD961, 2SD962, 2SD963, 2SD965, 2SD966, 2SD967, 2SD968
