Transistor2SD973, 2SD973ASilicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)Paramete

Transistor2SD973, 2SD973ASilicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C)Paramete

2SD970(K)Silicon NPN Triple DiffusedApplicationMedium speed and power switching complementary pair with 2SB791(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 2 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltag

2SD974Silicon NPN EpitaxialApplication Power switching TV horizontal deflection outputOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD974Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 1ACollector peak current

2SD975Silicon NPN EpitaxialApplicationPower switching / TV horizontal deflection outputOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 2ACollector peak current IC(peak) 2.5

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD971DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh DC Current GainHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as electronic ignition,

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD972DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current GainHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for hammer drivers, audio amplifiers applicationsA

isc Silicon NPN Darlington Power Transistor 2SD970DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CLow Saturation VoltageComplement to Type 2SB791Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed and power switchingapplic