Биполярный транзистор 9020
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 9020
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4
V
Макcимальный постоянный ток коллектора (Ic): 0.025
A
Предельная температура PN-перехода (Tj): 125
°C
Граничная частота коэффициента передачи тока (ft): 325
MHz
Ёмкость коллекторного перехода (Cc): 0.7
pf
Статический коэффициент передачи тока (hfe): 60
Аналоги (замена) для 9020
9020
Datasheet (PDF)
0.1. Size:233K international rectifier
irfr9020 irfr9022 irfu9020 irfu9022.pdf Document Number: 90350 www.vishay.comC-65Document Number: 90350 www.vishay.comC-66Document Number: 90350 www.vishay.comC-67Document Number: 90350 www.vishay.comC-68Document Number: 90350 www.vishay.comC-69Document Number: 90350 www.vishay.comC-70Document Number: 90350 www.vishay.comC-71Document Number: 90350 www.vishay.comC-72Legal Disclaimer NoticeVish
0.2. Size:266K international rectifier
irfd9020.pdf PD- 90462IRFD9020www.irf.com 106/09/05IRFD90202 www.irf.comIRFD9020www.irf.com 3IRFD90204 www.irf.comIRFD9020www.irf.com 5IRFD90206 www.irf.comIRFD9020Peak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +- dv/dt controlled by RG
0.3. Size:63K fairchild semi
fjpf9020.pdf FJPF9020Monolithic Construction With Built In Base-Emitter Shunt Resistors High Collector-Base Breakdown Voltage : BVCBO = -550V High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) Industrial UseTO-220F11.Base 2.Collector 3.EmitterPNP Epitaxial Darlington TransistorEquivalent CircuitAbsolute Maximum Ratings TC=25C unless otherwise notedCSymbol Par
0.4. Size:353K vishay
irfr9020pbf irfu9020pbf sihfr9020 sihfu9020.pdf IRFR9020, IRFU9020, SiHFR9020, SiHFU9020www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order As IRFR9020,VDS (V) - 50 SiHFR9020) Straight Lead Option (Order As IRFU9020,RDS(on) ()VGS = - 10 V 0.28SiHFU9020)Qg (Max.) (nC) 14 Repetitive Avalanche Ratings Qgs (nC) 6.5 Dynamic dV/dt Rating Simple Drive Requirements
0.5. Size:1570K vishay
irfr9020 irfu9020 sihfr9020 sihfu9020.pdf IRFR9020, IRFU9020, SiHFR9020, SiHFU9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 50DefinitionRDS(on) ()VGS = - 10 V 0.28 Surface Mountable (Order As IRFR9020,Qg (Max.) (nC) 14SiHFR9020)Qgs (nC) 6.5 Straight Lead Option (Order As IRFU9020,SiHFU9020)Qgd (nC) 6.5 Repetitive Avalanche Ratings
0.6. Size:1033K vishay
irfd9020pbf.pdf IRFD9020, SiHFD9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* For Automatic InsertionQg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 175 C Opertaing TemperatureConfiguration Single Fast Switching
0.7. Size:363K diodes
zxtp19020dff.pdf ZXTP19020DFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Features Mechanical Data BVCEO > -20V Case: SOT23F BVECO > -4V Case Material: Molded Plastic. Green Molding Compound. IC = -5.5A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = -15A Peak Current Moisture Sensitivity: Level 1 per J-STD-020 Guaranteed G
0.8. Size:417K diodes
zxtn19020dz.pdf ZXTN19020DZ20V NPN high gain transistor in SOT89SummaryBVCEX > 70VBVCEO > 20V BVECO > 4.5VIC(cont) = 7.5A VCE(sat)
0.9. Size:138K diodes
dxtp19020dp5.pdf A Product Line ofDiodes IncorporatedDXTP19020DP520V PNP HIGH GAIN TRANSISTOR PowerDI5 Features Mechanical Data 43% smaller than SOT223; 60% smaller than TO252 Case: PowerDI5 Maximum height just 1.1mm Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Rated up to 1.3W Moisture Sensitivity: Level
0.10. Size:901K diodes
zxtn19020dg.pdf A Product Line of Diodes Incorporated GreenZXTN19020DG 20V NPN HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data BVCEX > 70V Case: SOT223 BVCEO > 20V Case Material: Molded Plastic, Green Molding Compound; BVECO > 4.5V UL Flammability Rating 94V-0 IC = 9A High Continuous Current Moisture Sensitivity: Level 1 per J-STD-020 Low Satura
0.11. Size:421K diodes
zxtn19020dff.pdf ZXTN19020DFF 20V NPN HIGH GAIN POWER TRANSISTOR Features Mechanical Data BVCEO > 20V Case: SOT23F IC = 6.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound Very Low Saturation Voltage VCE(sat)
0.12. Size:839K diodes
zxtp19020dg.pdf A Product Line of Diodes Incorporated Green ZXTP19020DG 20V PNP HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > -20V Case: SOT223 BVECO > -4V Case Material: Molded Plastic, Green Molding Compound; IC = 8A High Continuous Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)
0.13. Size:424K diodes
zxtp19020dz.pdf ZXTP19020DZ20V PNP high gain transistor in SOT89SummaryBVCEO > -20VBVECO > -4V IC(cont) = 6A VCE(sat)
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