Transistor2SA719, 2SA720Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1317 and 2SC13185.0 0.2 4.0 0.2FeaturesComplementary pair with 2SC1317 and 2SC1318.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to 2SA719 30VCBO V+0.2 +0.2base voltage 2SA720 60 0.45

2SA719 -0.5 A, -30 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES For low-frequency power amplification and driver amplification. G HEmitterCollector Base CLASSIFICATION OF hFE JA DProduct-Rank 2SA719-Q 2SA719-R 2SA719-SMillimeterREF.B M

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS CSA719CSA720TO-92Plastic PackageBCEApplicationsAF Output Amplifier and DriverABSOLUTE MAXIMUM RATING (Ta=25C )DESCRIPTION SYMBOL CSA719 CSA720 UNITCollector Base Voltage VCBO 30 60 VCollector Emitter Voltage VCEO 25 50 VEmitter Base Vo

2SA719/2SA720(PNP) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features For low-frequency power amplification and driver amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 2SA719 -30 V 2SA720 -60 VCEO Collector-Emitter Voltage 2SA719 -25 V 2SA720 -50 Dimensions in inch

SEMICONDUCTORFTA719 / 720TECHNICAL DATAFTA719/FTA720 TRANSISTOR (PNP)FEATURES B C For Low-Frequency Power Amplification and Driver Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGSymbol Parameter Value Unit C 3.70 MAXDD 0.55 MAXVCBO Collector-Base Voltage FTA719 -30E 1.00VF 1.27FTA720 -60G 0.85