Биполярный транзистор BC143 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC143
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO39
BC143 Datasheet (PDF)
nsbc143tf3.pdf
MUN2216, MMUN2216L,MUN5216, DTC143TE,DTC143TM3, NSBC143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsbc143zpdxv6.pdf
MUN5333DW1,NSBC143ZPDXV6,NSBC143ZPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network (3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single tr
nsbc143zpdp6.pdf
MUN5333DW1,NSBC143ZPDXV6,NSBC143ZPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network (3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single tr
nsbc143zdp6.pdf
MUN5233DW1,NSBC143ZDXV6,NSBC143ZDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi
mun5316dw1 nsbc143tpdxv6.pdf
MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWwww.onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monoli
mun5333dw1 nsbc143zpdxv6 nsbc143zpdp6.pdf
Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 47 kWNPN and PNP Transistors with MonolithicBias Resistor NetworkMUN5333DW1,www.onsemi.comNSBC143ZPDXV6,NSBC143ZPDP6PIN CONNECTIONS(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single t
nsbc143tpdxv6.pdf
MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mon
nsbc143zdxv6.pdf
MUN5233DW1,NSBC143ZDXV6,NSBC143ZDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi
nsbc143epdxv6.pdf
MUN5332DW1,NSBC143EPDXV6,NSBC143EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network (3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a singl
nsbc143epdp6.pdf
MUN5332DW1,NSBC143EPDXV6,NSBC143EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network (3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a singl
nsbc143edxv6.pdf
MUN5232DW1,NSBC143EDXV6,NSBC143EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor w
nsbc143tdxv6.pdf
MUN5216DW1,NSBC143TDXV6Dual NPN Bias ResistorTransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasR
nsbc143edp6.pdf
MUN5232DW1,NSBC143EDXV6,NSBC143EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 4.7 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor w
nsbc143ef3.pdf
MUN2232, MMUN2232L,MUN5232, DTC143EE,DTC143EM3, NSBC143EF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 4.7 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor
nsbc143zf3.pdf
MUN2233, MMUN2233L,MUN5233, DTC143ZE,DTC143ZM3, NSBC143ZF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 47 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BR
hbc143es6r.pdf
Spec. No. : C368S6R Issued Date : 2003.05.28 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 Dual NPN Digital Transistors HBC143ES6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete is
hbc143ts6r.pdf
Spec. No. : C369S6R Issued Date : 2003.05.23 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/6 Dual NPN Digital Transistors HBC143TS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete is
hbc143zs6r.pdf
Spec. No. : C371S6R Issued Date : 2003.09.05 CYStech Electronics Corp.Revised Date :2014.01.08 Page No. : 1/6 Dual NPN Digital Transistors HBC143ZS6R Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete iso
hbc143ec6.pdf
Spec. No. : C368C6 Issued Date : 2014.05.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Dual NPN Digital Transistors HBC143EC6 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allo
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