Биполярный транзистор BC184K - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BC184K
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 5 pf
Статический коэффициент передачи тока (hfe): 240
Корпус транзистора: TO92
BC184K Datasheet (PDF)
bc182 bc183 bc184.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC182/DAmplifier TransistorsBC182,A,BNPN SiliconBC183BC184COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC182 183 184Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitterBase Voltage
bc184l.pdf
BC184LSilicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mATO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 500 mAPC Col
bc184.pdf
September 2007BC184Silicon NPN Small Signal Transistor BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mATO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 45 VVEBO Emitter-Base Voltage 5 VI C Collector Current (DC) 100 mA
bc184lc.pdf
BC184LCSilicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 250 (Min.) @VCE = 5.0V, IC = 2mATO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 200 mAPC Coll
bc184c.pdf
BC184CSilicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mATO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 500 mAPC Col
bc184.pdf
BC184 0.1 A, 45 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES The BC184 is complementary silicon planar epitaxial transistors G Hfor use in AF small signal amplifiers and drivers, as well as for low noise pre-amplifiers applications. Both types feature good linearit
bc182 bc183 bc184.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC182, A, BNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC183, A, B, CBC184, B, CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with EB "T"CAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC182 BC183 BC184 UNITSCollector Emitter
bc184l lb lc.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC184L, BC184LBBC184LCTO-92Plastic PackageGeneral Purpose Amplifier TransistorsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector -Emitter Voltage 30 VVCBOCollector -Base Voltage
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
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