Справочник транзисторов. BC237BP

 

Биполярный транзистор BC237BP - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC237BP
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 150 MHz
   Ёмкость коллекторного перехода (Cc): 5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: TO92

 Аналоги (замена) для BC237BP

 

 

BC237BP Datasheet (PDF)

 8.1. Size:51K  philips
bc237 bc237b 2.pdf

BC237BP
BC237BP

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC237; BC237BNPN general purpose transistors1997 Sep 04Product specificationSupersedes data of 1997 Mar 06File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC237; BC237BFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (m

 8.2. Size:59K  onsemi
bc237b.pdf

BC237BP
BC237BP

BC237BAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector-Emitter Voltage VCEO 45 VdcCollector-Emitter Voltage VCES 50 Vdc3Collector-Emitter Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTotal Power Dissipation @ TA = 25C PD 350 mW

 9.1. Size:112K  motorola
bc237 bc238 bc239.pdf

BC237BP
BC237BP

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC237/DAmplifier TransistorsBC237,A,B,CNPN SiliconBC238B,CBC239,CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC237 238 239Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 25 25 VdcCollectorEmitter Voltage VCES 50 30 30 VdcEmitterBa

 9.2. Size:45K  fairchild semi
bc237.pdf

BC237BP
BC237BP

BC237/238/239Switching and Amplifier Applications Low Noise: BC239TO-921NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. EmitterAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC237 50 V : BC238/239 30 VVCEO Collector-Emitter Voltage : BC237 45 V : BC238/239 25 VVEBO Emitter-Base Voltage : B

 9.3. Size:60K  samsung
bc237 bc238 bc239.pdf

BC237BP
BC237BP

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC239 TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES V:BC237 50 VBC238/239 30Collector-Emitter Voltage VCEO:BC237 45 VBC238/239 25 VEmitter-Base Voltage VEBO:BC237 6 VBC238/239 5 VCollector Current (DC) IC 100 mA

 9.4. Size:353K  cdil
bc237 bc238 bc239.pdf

BC237BP
BC237BP

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC237,238, A,B,CNPN SILICON PLANAR EPITAXIAL TRANSISTORSBC239, B,CTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCAmplifier TransistorsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BC237 BC238 BC239 UNITSCollector Emitter Voltage VCE

 9.5. Size:458K  jiangsu
bc237 bc238 bc239.pdf

BC237BP
BC237BP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC237 / BC238 / BC239 TRANSISTOR (NPN)FEATURES TO-92 Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE BC237 BC238 BC239 3. EMITTER XXX XXX XXX1 1 1Equivalent Circuit BC237,BC238,BC239=Device code Solid dot=Green molding compound device, if none,the normal dev

 9.6. Size:32K  kec
bc237 bc238 bc239.pdf

BC237BP
BC237BP

SEMICONDUCTOR BC237/8/9TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.LOW NOISE AMPLIFIER APPLICATION. B CFEATURES High Voltage : BC237 VCEO=45V.Low Noise : BC239 NF=0.2dB(Typ.), 3dB(Max.)N DIM MILLIMETERS(VCE=6V, IC=0.1mA, f=1kHz).A 4.70 MAXEKFor Complementary With PNP type BC307/308/309. G B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27

 9.8. Size:184K  lge
bc237 bc238 bc239.pdf

BC237BP
BC237BP

BC237/238/239(NPN)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)Collector-Emitter Voltage BC237 45 VCEO V BC238/239 25 Emitter-Base Voltage BC237 6 VEBO V BC238/239 5 IC Collector C

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