MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC327/DAmplifier TransistorsPNP SiliconBC327,-16,-25BC328,-16,-25COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC327 BC328 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 45 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 50 30 VdcEmitterBase Voltage

BC327/328Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338TO-9211. Collector 2. Base 3. EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC327 -50 V: BC328 -30 VVCEO Collector-Emitter Vo

BC327-16/25/40MCCTMMicro Commercial ComponentsBC328-16/25/4020736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Capable of 0.625Watts of Power Dissipation. Collector-curre

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBC327/A BC328 PNPSILICON PLANAR EPITAXIAL TRANSISTORSBC337/A BC338 NPNTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"EBCGeneral Purpose Transistors Best Suited for use in Driver and Output Stages of Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR (PNP) TO-92 FEATURES 1. COLLECTOR Power dissipation 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValueUnit 3. EMITTER VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25

SEMICONDUCTOR BC328TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESHigh Current : IC=-800mA.DC Current Gain : hFE=100 630 (VCE=-1V, Ic=-100mA).N DIM MILLIMETERSFor Complementary with NPN type BC338.A 4.70 MAXEKG B 4.80 MAXC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_H J

BC327/328(PNP)TO-92 Bipolar TransistorsTO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnits VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25 VEBO -5 Emitter-Base Voltage V IC Collector Current -Continuous -800

BC327/BC328PNP General Purpose TransistorCOLLECTOR1P b Lead(Pb)-FreeTO-922BASE13 23EMITTERMaximum Ratings(TA=25C unless otherwise noted)Rating Symbol BC327 BC328 UnitVCBOCollector-Base voltage-50 -30 VVCEOVCollector-Emitter voltage -45 -25VEBOVEmitter-Base voltage-5.0 -5.0Collector Current Continuous lCmA800Total Device DissipationPD62

BC327-xBK / BC328-xBKBC327-xBK / BC328-xBKGeneral Purpose Si-Epitaxial Planar TransistorsPNP PNPSi-Epitaxial Planar-Transistoren fr universellen EinsatzVersion 2010-06-230.1 Power dissipation 625 mW4.6VerlustleistungPlastic case TO-92Kunststoffgehuse (10D3)Weight approx. Gewicht ca. 0.18 gPlastic material has UL classification 94V-0C B EGehusematerial UL9

SBC328 Semiconductor Semiconductor PNP Silicon Transistor Descriptions High current application Switching application Features Suitable for AF-Driver stage and low power output stages Complementary pair with SBC338 Ordering Information Type NO. Marking Package Code SBC328 SBC328 TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 2.250.1

BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 111J2Base 222CLASSIFICATION OF hFE (1) 3A D 3Emitter 33Product-Rank BC327-16 BC327-25 BC327-40 BMillimeter REF. Min. Max. Product-Rank BC328-16 B