BC328 - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC327/D Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC327 BC328 Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 45 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 50 30 Vdc Emitter Base Voltage

BC327/328 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC327 -50 V BC328 -30 V VCEO Collector-Emitter Vo

BC327-16/25/40 MCC TM Micro Commercial Components BC328-16/25/40 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features PNP Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Capable of 0.625Watts of Power Dissipation. Collector-curre

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR (PNP) TO-92 FEATURES 1. COLLECTOR Power dissipation 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 3. EMITTER VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25

SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current IC=-800mA. DC Current Gain hFE=100 630 (VCE=-1V, Ic=-100mA). N DIM MILLIMETERS For Complementary with NPN type BC338. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J

BC327/328(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC327 -50 V BC328 -30 VCEO Collector-Emitter Voltage BC327 -45 V BC328 -25 VEBO -5 Emitter-Base Voltage V IC Collector Current -Continuous -800

BC327/BC328 PNP General Purpose Transistor COLLECTOR 1 P b Lead(Pb)-Free TO-92 2 BASE 1 3 2 3 EMITTER Maximum Ratings(TA=25 C unless otherwise noted) Rating Symbol BC327 BC328 Unit VCBO Collector-Base voltage -50 -30 V VCEO V Collector-Emitter voltage -45 -25 VEBO V Emitter-Base voltage -5.0 -5.0 Collector Current Continuous lC mA 800 Total Device Dissipation PD 62

BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors PNP PNP Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2010-06-23 0.1 Power dissipation 625 mW 4.6 Verlustleistung Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 C B E Geh usematerial UL9

SBC328 Semiconductor Semiconductor PNP Silicon Transistor Descriptions High current application Switching application Features Suitable for AF-Driver stage and low power output stages Complementary pair with SBC338 Ordering Information Type NO. Marking Package Code SBC328 SBC328 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5 0.1 2.25 0.1

BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 J 2Base 2 2 2 CLASSIFICATION OF hFE (1) 3 A D 3Emitter 3 3 Product-Rank BC327-16 BC327-25 BC327-40 B Millimeter REF. Min. Max. Product-Rank BC328-16 B