BC636-6 - описание и поиск аналогов

BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE 4.55 0.2 3.5 0.2 Power Dissipation o PCM 0.83 mW (Tamb=25 C) 08 0.43+0.07 0. 1 0.46+0.1 0. (1.27 Typ. ) 1 Emitter +0.2 1.25 0.2 1 2 3 2 Collector 2.54 0.1 3 Base o MAXIMUM RATINGS (TA

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC636/D High Current Transistors BC636 PNP Silicon BC638 COLLECTOR BC640 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 636 638 640 Rating Symbol Unit CASE 29 04, STYLE 14 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 60 80 Vdc Collector Base Voltage VCBO 45 60 80 Vdc Emitt

BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC636[2] SOT54 SC-43A TO-92 BC635 BCP51 SOT223 SC-73 - BCP54 BCX51 SOT89 SC-62 TO-243 BCX54 [1] Valid for all available

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 07 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLI

BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS BC635 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMA

BC636/638/640 Switching and Amplifier Applications Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K BC636 -45 V BC638 -60 V BC640 -100 V VCES Collector-Emitter Voltage BC636 -45 V BC6

March 2009 BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K -45 V VCES Collector-Emitter Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Volt

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage BC636 VCER -45 V at RBE=1Kohm BC638 -60 V BC640 -100 V Collector Emitter Voltage BC636 VCES -45 V BC638 -60 V BC640 -100 V Collector Emitter Voltage BC636 VCE

DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO-92-3 BC636 CASE 135AR Bent Lead 1 2 Features 3 Switching and Amplifier Applications 1. Emitter Complement to BC635 2. Collector These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3. Base Compliant MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted) P

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636 / BC638 / BC640 TRANSISTOR (PNP) TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR BC636 BC638 BC640 3. BASE XXX XXX XXX 1 1 1 Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Co

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters) VEBO Emitter-