BC638 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC636/D High Current Transistors BC636 PNP Silicon BC638 COLLECTOR BC640 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 636 638 640 Rating Symbol Unit CASE 29 04, STYLE 14 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 60 80 Vdc Collector Base Voltage VCBO 45 60 80 Vdc Emitt

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 07 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLI

BC636/638/640 Switching and Amplifier Applications Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K BC636 -45 V BC638 -60 V BC640 -100 V VCES Collector-Emitter Voltage BC636 -45 V BC6

March 2009 BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K -60 V VCES Collector-Emitter Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Volt

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage BC636 VCER -45 V at RBE=1Kohm BC638 -60 V BC640 -100 V Collector Emitter Voltage BC636 VCES -45 V BC638 -60 V BC640 -100 V Collector Emitter Voltage BC636 VCE

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636 / BC638 / BC640 TRANSISTOR (PNP) TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR BC636 BC638 BC640 3. BASE XXX XXX XXX 1 1 1 Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Co

SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES Complementary to BC637. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 H 0.45 VCBO -60 V Collector-Base Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VCEO -60 V Collecto

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters) VEBO Emitter-

3CA638(BC638) PNP Ptot TC 75 1.5 W ICM 1.0 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=10mA 60 V V(BR)EBO IEB=10 A 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=4V 0.1 A IC=0.5A VCEsat 0.5 V IB=0.05A VCE=2V hFE 63 25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur