Справочник транзисторов. BC808-16

 

Биполярный транзистор BC808-16 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC808-16
   Маркировка: 5E_5Ep_5Es_5EW_5EZ_9GA_MAA
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.31 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT23

 Аналоги (замена) для BC808-16

 

 

BC808-16 Datasheet (PDF)

 ..1. Size:175K  semtech
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf

BC808-16
BC808-16

BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A

 ..2. Size:342K  agertech
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf

BC808-16
BC808-16

BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa

 8.1. Size:136K  onsemi
sbc808-25lt1g.pdf

BC808-16
BC808-16

BC808-25LT1G,SBC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantEMITTER3MAXIMUM RATINGS

 8.2. Size:128K  onsemi
bc808-25lt1-40lt1.pdf

BC808-16
BC808-16

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -

 8.3. Size:164K  onsemi
bc808-25lt1g sbc808-25lt1g bc808-40lt1g.pdf

BC808-16
BC808-16

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U

 8.4. Size:126K  onsemi
bc808-40lt1g bc808-25lt1g bc808-40lt1g bc808-25lt1g.pdf

BC808-16
BC808-16

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO -25 V3Collector - Base Voltage VCBO -30 V1Emitter - Base Voltage VEBO -5.0 V2Collector Current -

 8.5. Size:97K  onsemi
bc808-25lt1g bc808-40lt1g.pdf

BC808-16
BC808-16

BC808-25LT1G,BC808-40LT1GGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeaturesCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGSRating Symbol Value U

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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