Биполярный транзистор BC846ALT1 Даташит. Аналоги
Наименование производителя: BC846ALT1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 110
Корпус транзистора: SOT23
Аналог (замена) для BC846ALT1
BC846ALT1 Datasheet (PDF)
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-
bc846alt1g.pdf

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf

General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device
Другие транзисторы... BC838-16 , BC838-25 , BC846 , BC846A , 2SB772-Y , 2SB772ZGP , 2SB857-B , 2SB857-C , TIP41C , BC846AR , BC846AW , BC846AWT1 , BC846B , 2SB772-GR , 2SB772I , 2SB772-O , 2SB772-R .
History: BCR158W | 2SA48



Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl | 2sc1913