BC847CR. Аналоги и основные параметры
Наименование производителя: BC847CR
Маркировка: 1GR
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hFE): 420
Корпус транзистора: SOT23
Аналоги (замена) для BC847CR
- подборⓘ биполярного транзистора по параметрам
BC847CR даташит
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BC847B BC847C SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC847B 1F BC847C 1G SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847B - THE PNP COMPLEMENTARY TYPE IS BC857B SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN
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BC847BW BC847CW SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type Marking BC847BW 1FW BC847CW 1GW SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE SOT-323 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING BC847BW - THE PNP COMPLEMENTARY TYPE IS BC857BW SOT-323 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTORS WITH
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BC847xQB series 45 V, 100 mA NPN general-purpose transistor Rev. 1 24 January 2020 Product data sheet 1. General description NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface- Mounted Device (SMD) plastic package with side-wettable flanks. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BC847AQB SOT8015 MO-340BA BC85
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BC847XQA series 45 V, 100 mA NPN general-purpose transistors Rev. 1 26 August 2015 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number Package PNP complement Nexperia JEITA
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BC847xMB series 45 V, 100 mA NPN general-purpose transistors Rev. 1 5 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEITA JEDEC BC847AMB SOT883B - - BC857AMB BC847BMB SOT88
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BC847xMB series 45 V, 100 mA NPN general-purpose transistors Rev. 1 5 March 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC BC847AMB SOT883B - - BC857AMB BC847BMB SOT883B -
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BC847xW-Q series 45 V, 100 mA NPN general-purpose transistors Rev. 2 24 June 2021 Product data sheet 1. General description NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement Nexperia JEITA BC847W-Q SOT323 SC-70 BC857W-Q BC847AW-Q BC857AW-Q BC847BW-Q BC857BW-Q
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BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847C BC857C BC847
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BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 12 24 October 2019 Product data sheet 1. Product profile 1.1. General description NPN general-purpose transistors in a small SOT23 (TO-236AB), very small SOT323 (SC-70) or ultra small SOT883 (DFN1006-3) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number[1] Package PNP complement Nexperia
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BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847C BC857C BC847
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BC846W SERIES BC847W SERIES www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE SEE MARKING CODE
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BC847CDLP 45V DUAL NPN SMALL SIGNAL TRANSISTOR Features Mechanical Data BVCEO > 45V Case X2-DFN1310-6 Nominal package height 0.4mm Low profile 0.4mm high package for thin applications Case Material Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Full
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BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available A (BC856W-BC858W) Dim Min Max C A For Switching and AF Amplifier Applications 0.25 0.40 B 1.15 1.35 Mechanical Data B C C 2.00 2.20 Case SOT-323, Molded Plastic D 0.65 Nominal B E Case material - UL Flammability Rating
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BC847...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC847BL3 is not qualified according AEC Q101 Type Marking Pin
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M C C TM Micro Commercial Components BC846A thru BC849C Static Characteristic h I FE C 10 3000 COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA 18uA 6 16uA T =25 14uA a 12uA 4 100 10uA 8uA 6uA 2 4uA I B=2uA 0 10 0 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR EMITTER VOLTAGE V CE (V) V I
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DATA SHEET www.onsemi.com Dual General Purpose Transistors SOT-363/SC-88 CASE 419B NPN Duals STYLE 1 BC846BDW1, BC847BDW1, (3) (2) (1) BC848CDW1 These transistors are designed for general purpose amplifier Q1 Q2 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (4) (5) (6) Features S and NSV Prefixes for Automotiv
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BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise BC850 2 Complement to BC856, BC857, BC858, BC859, and BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Marking Package Packing Method BC846AMTF 8A
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BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC
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BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Vo
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BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals (Complimentary) LBC846BPDW1T1G These transistors are designed for general purpose amplifier LBC847BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC847CPDW1T1G designed for low power surface mount applications. LBC848BPDW1T1G LBC848CPDW1T1G We declare that the material of product comp
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
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LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. We declare that the material of product compliance wit
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846AWT1G,BWT1G LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free
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BC846AW BC850CW NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER VOLTAGE 250 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic Terminals Solderable per
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BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES General purpose amplifier applications 0.120(3.04) 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf
BC846AW-AU BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER 250 mWatt VOLTAGE FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf
BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . 0.056(1.40) (Ha
bc846b-g bc847c-g.pdf
Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)
bc847aw-g bc847cw-g.pdf
Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf
Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit
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R UMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collect
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BC846-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; C B E Symbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846 BC847 50 30
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BC847 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs) S
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846/847/848/849/850 TRANSISTOR NPN FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. 1.Base 2.Emitter 3.Collector DESCRIPTION SOT-23 Plastic Package NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Symbol Val
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846/7/8 TRANSI STOR (NPN) BC846 BC847 BC848 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848 Collector-Emitter Voltage 6
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BC846/BC847/BC848 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC846A=1A BC846B=1B Small Outline Plastic Package BC847A=
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC8 46 THRU BC8 50 TRANSISTOR(NPN) FEATURE Low current (max. 100 mA) SOT-23 Low voltage (max. 65 V). 1 BASE APPLICATIONS 2 EMITTER General purpose switching and amplification. 3 COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/86
sebc847bu sebc847cu.pdf
SHANGHAI June 2009 MICROELECTRONICS CO., LTD. SEBC847BU/SEBC847CU NPN General Purpose Transistor Revision A External dimensions (Units mm) Features BVCEO
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RoHS RoHS COMPLIANT COMPLIANT BC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage 80 BC84
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf
RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J
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RoHS RoHS COMPLIANT COMPLIANT BC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846 BC847 BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B, BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC846/847/848 MAXIMUM RATINGS Characteristic Symbol Unit (BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage
bc847a bc847b bc847c.pdf
BC847 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC857 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe
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Plastic-Encapsulate Transistors FEATURES (NPN) BC846A/B For general AF applications (NPN) BC847A/B/C High collector current (NPN) BC848A/B/C High current gain Low collector-emitter saturation voltage Marking BC846A BC846B BC847A BC847B 1A 1B 1E 1F BC847C BC848A BC848B BC848C 1. BASE 2. EMITTER SOT-23 1G 1J 1K 1L 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Par
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BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 A Dim Min Max DEVICE MARKING C A 0.37 0.51 BC846A=1A; BC846B=1B; B C B 1.20 1.40 BC847A=1E; BC847B=1F; BC847C=1G; C 2.30 2.50 TOP VIEW B E BC848A=1J; BC848B=1K BC848C=1L D 0.89 1.03 D E
Другие транзисторы: 2SB891F, 2SB963-Z, BC847BLT1, BC847BR, BC847BW, BC847BWT1, BC847C, BC847CLT1, S9014, BC847CW, BC847CWT1, BC847PN, BC847S, BC848, BC848A, 2SB647L-B, 2SB647L-C
History: SBP13005S
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