BC848 - аналоги, параметры транзистора - Справочник транзисторов

..1. Size:124K philips
bc848 ser.pdf pdf_icon

BC848 series 30 V, 100 mA NPN general-purpose transistors Rev. 07 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC BC848B SOT23 - TO-236AB BC858B BC848W SOT323 SC-70 - BC858W 1.2 Features G

..2. Size:136K fairchild semi
bc846 bc847 bc848 bc849 bc850-series.pdf pdf_icon

April 2011 BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise BC849, BC850 2 Complement to BC856 ... BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Coll

..3. Size:58K samsung
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

NPN EPITAXIAL BC846/847/848/849/850 SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 Sutable for automatic insertion in thick and thin-film circuits LOW NOISE BC849, BC850 Complement to BC856 ... BC860 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO BC846 80 V BC847/850 50 V BC848/849 30 V Collector E

..4. Size:273K siemens
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

NPN Silicon AF Transistors BC 846 ... BC 850 Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BC 846 A 1As Q62702-C1772 B E C SOT-23 BC 846 B 1Bs Q6

..5. Size:34K diodes
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

BC846 BC847 SOT23 NPN SILICON PLANAR BC848 BC849 GENERAL PURPOSE TRANSISTORS BC850 ISSUE 6 - JANUARY 1997 T I D T I T T 8 8 8 8 8 8 8 8 8 8 E C 8 8 8 8 8 8 8 8 8 8 B 8 8 8 8 8 8 8 SOT23 ABSOLUTE MAXIMUM RATINGS. T 8 8 8 8 8 8 IT II V I V 8 V II i V I V 8 V II i V I V V i V I V V i II I II I I i I Di i i T i T T T ELECTRICAL CHAR

..6. Size:116K diodes
bc846 bc847 bc848.pdf pdf_icon

BC846AW - BC848CW NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available (BC856W-BC858W) C Dim Min Max For Switching and AF Amplifier Applications A 0.25 0.40 Lead Free/RoHS Compliant (Note 3) B C B 1.15 1.35 "Green" Device (Note 4 and 5) C 2.00 2.20 B E D 0.65 Nomina

..7. Size:220K mcc
bc846a bc847 bc848 bc849c sot-23.pdf pdf_icon

..8. Size:81K mcc
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MCC BC846A TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone (818) 701-4933 BC848C Fax (818) 701-4939 Features NPN Power Dissipation 0.225W (Tamb=25 )(Note 1) Collector Current 0.1A Plastic-Encapsulate Case Material Molded Plastic. UL Flammability Transistors Classification Rating 94V-0 and MSL Rati

..9. Size:128K onsemi
bc846 bc847 bc848 series.pdf pdf_icon

BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM

..10. Size:131K onsemi
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

BC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc

..11. Size:82K auk
bc848.pdf pdf_icon

BC848 Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=30V Complementary pair with BC858 Ordering Information Type NO. Marking Package Code BC848 SA SOT-23 hFE rank Outline Dimensions unit mm 2.4 0.1 1.30 0.1 1 3 2 0.45 0.60 0.2 Min. PIN Connections 1.

..12. Size:444K cdil
bc846 bc847 bc848.pdf pdf_icon

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846, BC847, BC848 PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER SOT-23 3 = COLLECTOR 3 Formed SMD Package For Lead Free Parts, Device Part # will be Prefixed with "T" 1 2 Marking BC846 =1D BC846A=1A BC846B=1B BC847 =1H BC847A=1E BC847B=1F BC8

..13. Size:513K jiangsu
bc846 bc847 bc848.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC848 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base V

..14. Size:43K kec
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SEMICONDUCTOR BC846/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Voltage BC846 VCEO=65V. C 1.30 MAX 2 For Complementary With PNP Type BC856/857/858. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 L 0.55

..15. Size:79K zovie
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Zowie Technology Corporation General Purpose Transistor NPN Silicon COLLECTOR 3 3 BASE 1 1 BC848A,B,C 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current-Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max. Unit o Total

..16. Size:2003K htsemi
bc846 bc847 bc848.pdf pdf_icon

BC846A,B / BC847A, B, C / BC848A, B, C TRANSISTOR (NPN) SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Voltage V

..17. Size:1721K lge
bc846 bc847 bc848.pdf pdf_icon

BC846A,B BC847A,B,C BC848A,B,C SOT-23 Transistor(NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848

..18. Size:101K wietron
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BC846BDW Series General Purpose Transistor 2 1 3 6 5 4 NPN Duals 1 2 P b Lead(Pb)-Free 3 4 5 6 SOT-363(SC-88) NPN+NPN Maximum Ratings BC846 BC847 Rating Symbol BC848 Unit 65 45 Collector-Emitter Voltage V 30 CEO Vdc 80 50 Collector-Base Voltage VCBO 30 Vdc 6.0 Emitter-Base Voltage VEBO 6.0 5.0 Vdc Collector Current-Continuous IC 100 100 100 mAdc Thermal Characteri

..19. Size:204K wietron
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 XX = Device 1 1 Code (See 2 BASE Table Below) SOT-23 *Moisture Sensitivity Level 1 1 2 *ESD Rating - Human Body Model >4000V 2 EMITTER -Machine Model >400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit Collector-Emi

..20. Size:495K wietron
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BC846BPDW Series NPN/PNP Dual General Purpose Transistors 2 1 3 P b Lead(Pb)-Free 6 5 4 1 2 3 4 5 6 NPN+PNP SOT-363(SC-88) MAXIMUM RATINGS - NPN Rating Symbol BC846 BC847 BC848 Unit Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current - Continuous IC 100 100 100 mAdc MAXIMUM RATINGS - PNP

..21. Size:351K willas
bc846 bc847 bc848 bc850-xlt1.pdf pdf_icon

BC8 6A/BLT1 FM120-M BC8 7A/B/CLT1 WILLAS THRU BC8 8A/B/CLT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface

..22. Size:1090K shenzhen
bc846 bc847 bc848.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCB

..23. Size:1073K can-sheng
bc846 bc847 bc848 sot-23.pdf pdf_icon

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors BC846A,B TRANSISTOR(NPN) SOT-23 BC847A,B,C BC848A,B,C 1 BASE 2 EMTTER FEATURES 3 COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS(TA=25 unless other

..24. Size:393K semtech
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

..25. Size:1598K kexin
bc846 bc847 bc848.pdf pdf_icon

SMD Type Transistors NPN Transistors BC846 BC848 (KC846 KC848) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Ideally suited for automatic insertion For switching and AF amplifier applications 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC846 BC847 BC848 Unit C

..26. Size:1130K slkor
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BC846 BC848 NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor www.slkormicro.com 1 BC846 BC848 www.slkormicro.com 2 BC846 BC848 www.slkormicro.com 3 BC846 BC848 www.slkormicro.com 4

..27. Size:4648K anbon
bc846 bc847 bc848.pdf pdf_icon

BC846/BC847/BC848 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES Ideally suited for automatic insertion SOT-23 For switching and AF amplifier applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (T a=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Volta

..28. Size:2167K cn twgmc
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

BC846-BC850 BC846/847/848/849/850 TRANSISTOR NPN FEATURES SOT-23 Low current (max. 100 mA) Low voltage (max. 65 V). 1 BASE 2 EMITTER APPLICATIONS 3 COLLECTOR General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Sy

..29. Size:306K cn cbi
bc846 bc847 bc848 bc849 bc850.pdf pdf_icon

BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Units Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collec

0.1. Size:207K motorola
bc846awt bc847awt bc848awt bc849awt bc850awt.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846AWT1/D General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR CWT1 These transistors are designed for general purpose amplifier 3 BC848AWT1,BWT1, applications. They are housed in the SOT 323/SC 70 which is designed for low power surface mount applications. CWT1 1 BASE 2 EMITTER MAX

0.2. Size:220K motorola
bc846alt bc847alt bc848alt bc849alt bc850alt.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC846ALT1/D BC846ALT1,BLT1 General Purpose Transistors BC847ALT1, NPN Silicon COLLECTOR BLT1,CLT1 thru 3 BC850ALT1,BLT1, 1 CLT1 BASE BC846, BC847 and BC848 are Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS BC847 BC848 BC850 BC849 Rating Symbol BC846 Unit 3 Collector Emitter Voltage VCEO 65 45 30 V 1 C

0.3. Size:46K philips
bc846f bc847f bc848f series 2.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC846F; BC847F; BC848F series NPN general purpose transistors 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846F; BC847F; BC848F series FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Low current (max. 10

0.4. Size:124K nxp
bc848b bc848w.pdf pdf_icon

BC848 series 30 V, 100 mA NPN general-purpose transistors Rev. 07 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC BC848B SOT23 - TO-236AB BC858B BC848W SOT323 SC-70 - BC858W 1.2 Features G

0.5. Size:272K siemens
bc846w bc847w bc848w bc849w bc850w.pdf pdf_icon

NPN Silicon AF Transistor BC 846 W ... BC 850 W Features For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code Pin Configuration Package (tape and reel) 1 2 3 B E C BC 846 AW 1 As Q62702-C2319 SO

0.6. Size:145K rohm
bc848bw bc848bw bc848b.pdf pdf_icon

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW 2) Complements the BC858B / BC858BW. 2.0 0.2 1.3 0.1 0.9 0.1 0.65 0.65 0.2 0.7 0.1 (1) (2) 0 0.1 (3) +0.1 0.3 (1) Emitter -0 0.15 0.05 ROHM UMT3 (2) Base All terminals have same dimensions EIAJ SC-7

0.7. Size:522K rohm
bc848bw bc848b.pdf pdf_icon

BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW 2) Complements the BC858B / BC858BW. SOT-323 2.0 0.2 1.3 0.1 0.9 0.1 0.65 0.65 0.2 0.7 0.1 (1) (2) 0 0.1 (3) +0.1 0.3 (1) Emitter -0 0.15 0.05 ROHM UMT3 (2) Base All terminals have same dimensions EI

0.8. Size:369K diodes
bc846aw-bc848cw.pdf pdf_icon

BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT323 Complementary PNP Types BC856W BC858W Case Material Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

0.9. Size:446K diodes
bc846 bc847 bc848-a-b-c.pdf pdf_icon

BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database. Features Ideally Suited for Automatic Insertion SOT-23 Complementary PNP Types Available (BC856-BC858) For Switching and AF Amplifier Applications Dim Min Max Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes

0.10. Size:299K diodes
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf pdf_icon

BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case SOT23 Complementary PNP Types BC856 BC858 Case material molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note

0.11. Size:46K diodes
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf pdf_icon

BC846AW - BC848CW NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features Ideally Suited for Automatic Insertion SOT-323 Complementary PNP Types Available A (BC856W-BC858W) Dim Min Max C A For Switching and AF Amplifier Applications 0.25 0.40 B 1.15 1.35 Mechanical Data B C C 2.00 2.20 Case SOT-323, Molded Plastic D 0.65 Nominal B E Case material - UL Flammability Rating

0.12. Size:182K infineon
bc846series bc847series bc848series bc849series bc850series.pdf pdf_icon

BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

0.13. Size:876K infineon
bc847a bc847b bc847bl3 bc847bw bc847c bc847cw bc848a bc848b bc848bl3 bc848bw bc848c bc848cw bc849b bc849c bc849cw bc850b bc850bw bc850c bc850cw.pdf pdf_icon

BC847...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011) 1 BC847BL3 is not qualified according AEC Q101 Type Marking Pin

0.14. Size:180K infineon
bc848bl3 bc850bf.pdf pdf_icon

BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

0.15. Size:180K infineon
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BC846...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q101 1 Pb-containing package may be available upon special request 20

0.16. Size:182K infineon
bc846a bc846b bc846bw bc847a bc847b bc847bf bc847bl3 bc847bt bc847bw bc847c bc847cw bc848a bc848aw bc848b bc848bf bc848bl3 bc848bw bc848c bc848cw bc849b bc849bf bc849c bc849cw bc850b bf850bf bc850bw bc850c.pdf pdf_icon

0.17. Size:666K mcc
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MCC BC846AW/BW Micro Commercial Components Micro Commercial Components BC847AW/BW/CW 20736 Marilla Street Chatsworth CA 91311 BC848AW/BW/CW Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN RoHS Compliant. See ordering information) Low current (max. 100mA) General Purpose Low voltage (max. 65V) Epo

0.18. Size:622K mcc
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c bc849b bc849c.pdf pdf_icon

M C C TM Micro Commercial Components BC846A thru BC849C Static Characteristic h I FE C 10 3000 COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA 18uA 6 16uA T =25 14uA a 12uA 4 100 10uA 8uA 6uA 2 4uA I B=2uA 0 10 0 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR EMITTER VOLTAGE V CE (V) V I

0.19. Size:111K onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf pdf_icon

BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-

0.20. Size:218K onsemi
bc846bdw1t1g bc847bdw1t1g bc847cdw1t1g bc848cdw1t1g.pdf pdf_icon

DATA SHEET www.onsemi.com Dual General Purpose Transistors SOT-363/SC-88 CASE 419B NPN Duals STYLE 1 BC846BDW1, BC847BDW1, (3) (2) (1) BC848CDW1 These transistors are designed for general purpose amplifier Q1 Q2 applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. (4) (5) (6) Features S and NSV Prefixes for Automotiv

0.21. Size:144K onsemi
bc847bdw1t1g bc848cdw1t1g.pdf pdf_icon

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http //onsemi.com Dual General Purpose Transistors SOT-363 CASE 419B NPN Duals STYLE 1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is (3) (2) (1) designed for low power surface mount applications. Features Q1 Q

0.22. Size:108K onsemi
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf pdf_icon

BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device

0.23. Size:158K onsemi
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf pdf_icon

General Purpose Transistors NPN Silicon BC846ALT1G Series Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device

0.24. Size:68K onsemi
bc848cdxv6t1g bc847cdxv6t1g.pdf pdf_icon

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose http //onsemi.com Transistors NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for Q1 Q2 low power surface mount applications. Lead-Free Solder Plating (4) (5) (6) MAXIMUM RATINGS BC847CDXV6T1 Rating Symb

0.25. Size:1432K onsemi
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf pdf_icon

BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements

0.26. Size:131K onsemi
bc846bpdw1t1g bc847bpdw1t1g bc848cpdw1t1g.pdf pdf_icon

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli

0.27. Size:131K onsemi
bc848clt1g bc848blt1g.pdf pdf_icon

BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO V

0.28. Size:109K onsemi
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BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

0.29. Size:108K onsemi
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features www.onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V ESD Rating - Machine Model > 400 V COLLECTOR 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable BASE These Device

0.30. Size:178K onsemi
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BC846, BC847, BC848 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

0.31. Size:116K onsemi
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BC846ALT1G Series General Purpose Transistors NPN Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model >4000 V ESD Rating - Machine Model >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR 3 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 These Devices are Pb-

0.32. Size:216K onsemi
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BC846 / BC847 / BC848 / BC850 NPN Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise BC850 2 Complement to BC856, BC857, BC858, BC859, and BC860 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information(1) Part Number Marking Package Packing Method BC846AMTF 8A

0.33. Size:68K onsemi
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BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7

0.34. Size:96K onsemi
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BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. Q1 Q2 Features These are Pb-Free Devices (4) (5) (6) BC847CDXV6T1 MAXIMUM RATINGS Rating Symb

0.35. Size:132K onsemi
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0.36. Size:131K onsemi
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BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO V

0.37. Size:68K onsemi
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BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7

0.38. Size:68K onsemi
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BC846, BC847, BC848 Series General Purpose Transistors NPN Silicon http //onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 which is COLLECTOR designed for low power surface mount applications. 3 Features 1 Pb-Free Packages are Available BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit SC-7

0.39. Size:177K onsemi
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

0.40. Size:208K onsemi
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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Appli

0.41. Size:229K onsemi
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Dual General Purpose Transistors NPN Duals BC846BDW1, BC847BDW1, BC848CDW1 www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363/SC-88 S and NSV Prefixes for Automotive and Other Applications CASE 419B STYLE 1 Requiring Unique Si

0.42. Size:127K onsemi
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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G Dual General Purpose Transistors http //onsemi.com NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (4) (5) (6) Com

0.43. Size:110K onsemi
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BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and

0.44. Size:262K onsemi
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ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

0.45. Size:200K onsemi
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0.46. Size:131K onsemi
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BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR 3 ESD Rating - Machine Model >400 V Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO V

0.47. Size:173K auk
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7 BC848UF Semiconductor Semiconductor NPN Silicon Transistor Descriptions General purpose application Switching application Features High voltage VCEO=30V Complementary pair with BC858UF Ordering Information Type NO. Marking Package Code BC848UF BS SOT-323F hFE rank Outline Dimensions unit mm 1.95 2.25 1.20 1.40 1 3 2 PIN Conne

0.48. Size:262K auk
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BC848U NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application 3 Features 1 High voltage VCEO=30V 2 Complementary pair with BC858U Ordering Information SOT-323 Type NO. Marking Package Code BS BC848U SOT-323 Device Code hFE Rank Year&Week Code Absolute maximum rat

0.49. Size:77K rectron
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BC846 BC847 BC848 NPN Silicon Planar Epitaxial Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) SOT-23 SMD Package Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL BC846 BC847 BC848 UNITS DESCRIPTION VCBO Collector Base Voltage 80 50 30 V Collector Emmitter Voltage (VBE = 0V) VCES 80 50 30 V VCEO Collector Emitt

0.50. Size:898K secos
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BC846AW,BW BC847AW, BW, CW Elektronische Bauelemente BC848AW, BW, CW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications Base Emitter Collector SOT-323 A L Collector 3 3 MARKING Top View C B

0.51. Size:302K secos
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BC846A, B BC847A, B, C Elektronische Bauelemente BC848A, B, C A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES A Dim Min Max L n A 2.800 3.040 General Purpose Transistor NPN Type n 3 B 1.200 1.400 Collect current 0.1A S Top View O O B n C 0.890 1.110 Operating Temp. -55 C +150 C 1 2 n D 0.370 0.500 RoHS compliant product V G G 1.780 2.040 H 0.013

0.52. Size:201K taiwansemi
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BC846A/B, BC847A/B/C, BC848A/B/C Taiwan Semiconductor Small Signal Product 200mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) under plate - Pb free and RoHS compliant - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halo

0.53. Size:361K cdil
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC846W , 847W, 848W SOT-323 NPN Formed SMD Package Marking BC846W =1D BC847AW =1E BC846AW =1A BC847BW =1F BC846BW =1B BC847CW =1G BC847W =1H BC848W =1M General Purpose Switching and Amplification. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified other

0.54. Size:768K jiangsu
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors BC846W TRANSISTOR (NPN) BC847W SOT-323 BC848W 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage BC846W

0.55. Size:740K jiangsu
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www.jscj-elec.com AD-BC846/47/48 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-BC846/47/48 Series Plastic-Encapsulated Transistor AD-BC846/47/48 series Transistor (NPN) FEATURES Ideally suited for automatic insertion For switching and AF amplifier applications AEC-Q101 qualified MARKING AD-BC846-A = 1A; AD-BC846-B = 1B AD-BC847-A = 1E; AD-BC8

0.56. Size:35K kec
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SEMICONDUCTOR BC846W/7W/8W TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 High Voltage BC846W VCEO=65V. _ + B 1.25 0.15 _ + C 0.90 0.10 For Complementary With PNP Type BC856W/857W/858W. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.0

0.57. Size:2205K htsemi
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BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter Vo

0.58. Size:1702K lge
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BC846AW,BW BC847AW,BW,CW BC848AW,BW,CW STO-323 Transistor(NPN) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC846W 80 BC847W 50 V BC8

0.59. Size:2832K wietron
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BC846AW/BW BC847AW/BW/CW BC848AW/BW/CW General Purpose Transistor COLLECTOR 3 3 NPN Silicon P b Lead(Pb)-Free 1 1 2 BASE 2 EMITTER SOT-323(SC-70) Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage BC846 65 45 V BC847 CEO V 30 BC848 Collector-Base Voltage BC846 80 V V BC847 CBO 50 BC848 30 Emitter-Base Voltag

0.60. Size:66K hsmc
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Spec. No. HE6843 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2008.01.30 MICROELECTRONICS CORP. Page No. 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag

0.61. Size:242K semtech
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BC846 BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC

0.62. Size:227K lrc
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LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G LBC847BDW1T1G NPN Duals LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. S-LBC846ADW1T1G We declare that the material of produ

0.63. Size:172K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. We declare that the material of product comp

0.64. Size:209K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

0.65. Size:402K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C

0.66. Size:172K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

0.67. Size:226K lrc
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LESHAN RADIO COMPANY, LTD. LBC846ADW1T1G Dual General Purpose Transistors LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CDW1T1G designed for low power surface mount applications. We declare that the material of product compliance wit

0.68. Size:401K lrc
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon CWT1G We declare that the material of product compliance with RoHS requirements. LBC848AWT1G,BWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATIO

0.69. Size:172K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. S-LBC846BPDW1T1G We declare that the materi

0.70. Size:394K lrc
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free

0.71. Size:402K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C

0.72. Size:402K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan

0.73. Size:407K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

0.74. Size:209K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G These transistors are designed for general purpose amplifier LBC846BDW1T1G applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. LBC847BDW1T1G We declare that the material of product compliance with LBC847CDW1T1G RoHS requirements. LBC848

0.75. Size:402K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G ESD Rating Human Body Model >4000 V S-LBC846ALT1G ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chan

0.76. Size:402K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3 and Control C

0.77. Size:227K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBC846ALT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO Vdc SOT 23 LBC846 6

0.78. Size:404K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 LBC846ALT1G S-LBC846ALT1G ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

0.79. Size:396K lrc
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LESHAN RADIO COMPANY, LTD. LBC846AWT1G,BWT1G General Purpose Transistors LBC847AWT1G,BWT1G NPN Silicon We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site LBC848AWT1G,BWT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. CWT1G ( ) ORDERING INFORMATION Pb Free

0.80. Size:173K lrc
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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846BPDW1T1G LBC847BPDW1T1G NPN/PNP Duals (Complimentary) LBC847CPDW1T1G These transistors are designed for general purpose amplifier LBC848BPDW1T1G applications. They are housed in the SOT 363/SC 88 which is LBC848CPDW1T1G designed for low power surface mount applications. We declare that the material of product comp

0.81. Size:396K lrc
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC846AWT1G,BWT1G NPN Silicon LBC847AWT1G,BWT1G We declare that the material of product compliance with RoHS requirements. CWT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC848AWT1G,BWT1G CWT1G ( ) ORDERING INFORMATION Pb Free

0.82. Size:272K first silicon
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SEMICONDUCTOR BC846S BC850S TECHNICAL DATA General Purpose Transistors NPN Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V 3 Machine Model >400 V 2 1 MAXIMUM RATINGS SOT 23 Rating Symbol Value Unit Collector Emitter Voltage VCEO Vdc BC846 65 BC847, BC850 45 BC848, BC849 30 3 COLLECTOR Collector Base Voltage VCBO Vdc BC846

0.83. Size:1023K kexin
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SMD Type Transistors NPN Transistors BC846W,BC847W,BC848W (KC846W,KC847W,KC848W) Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC846W 80 Collector - Base Voltage BC847W VCBO 50 BC848W 30 BC846W 65 Collector - Emitter Volt

0.84. Size:446K panjit
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BC846AW BC850CW NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER VOLTAGE 250 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic Terminals Solderable per

0.85. Size:536K panjit
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BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES General purpose amplifier applications 0.120(3.04) 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20

0.86. Size:1070K panjit
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BC846AW-AU BC850CW-AU NPN GENERAL PURPOSE TRANSISTORS 30/45/65 Volt POWER 250 mWatt VOLTAGE FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard MECHANICAL DATA Case SOT-323, Plastic

0.87. Size:330K panjit
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BC846,BC847,BC848,BC849,BC850 SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volt POWER 330 mWatt FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . 0.056(1.40) (Ha

0.88. Size:123K comchip
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Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055

0.89. Size:123K comchip
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Small Signal Transistor BC846AW-G Thru. BC848CW-G (NPN) RoHS Device Features -Power dissipation PCM 0.15W (@TA=25 C) SOT-323 -Collector current ICM 0.1A 0.087 (2.20) -Collector-base voltage 0.079 (2.00) VCBO BC846W=80V 3 BC847W=50V 0.053(1.35) BC848W=30V 0.045(1.15) -Operating and storage junction temperature 1 2 range TJ, TSTG= -55 to +150 C 0.006 (0.15) 0.055

0.90. Size:145K comchip
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Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)

0.91. Size:145K comchip
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Small Signal Transistor BC846A-G Thru. BC848C-G (NPN) RoHS Device Features -Power dissipation O PCM 0.20W (@TA=25 C) SOT-23 -Collector current ICM 0.1A -Collector-base voltage 0.118(3.00) 0.110(2.80) VCBO BC846=80V 3 BC847=50V 0.055(1.40) BC848=30V 0.047(1.20) -Operating and storage junction temperature 1 2 O range TJ, TSTG= -65 to +150 C 0.079(2.00) 0.071(1.80)

0.92. Size:500K dxc
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Dual General Purpose Transistors Dual General Purpose Transistors NPN/PNP Duals (Complimentary) DBC846BPDW1T1G DBC847BPDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is DBC847CPDW1T1G designed for low power surface mount applications. DBC848BPDW1T1G We declare that the material of product compliance wit

0.93. Size:518K slkor
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BC846W-BC850W NPN Silicon Epitaxial Planar Transistor for general purpose and switching applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC846W 80 BC847W 50 VCBO V BC848W 30 BC849W 30 BC850W 50 Collector Emitter Voltage BC846W 65 BC847W 45 VCEO V BC848W 30 BC849W 30 BC850W 45 Emitter Base Voltage

0.94. Size:218K sunroc
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SUNROC BC846A,B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collector-Emitter V

0.95. Size:433K umw-ic
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R UMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848 VCEO Collect

0.96. Size:555K fuxinsemi
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0.97. Size:2633K high diode
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BC846-8 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; C B E Symbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846 BC847 50 30

0.98. Size:1245K mdd
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BC847 SOT-23 Plastic-Encapsulate Transistor SOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier Applications PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs) S

0.99. Size:380K powersilicon
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0.100. Size:951K cn salltech
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0.101. Size:940K cn shikues
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0.102. Size:2177K wpmtek
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BC846/847/848/849/850 TRANSISTOR NPN FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. 1.Base 2.Emitter 3.Collector DESCRIPTION SOT-23 Plastic Package NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/860. ABSOLUTE MAXIMUM RATINGS (T =25 C) A Parameter Symbol Val

0.103. Size:1237K cn yongyutai
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BC846/7/8 TRANSI STOR (NPN) BC846 BC847 BC848 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Ideaiiy suited for automatic insertion For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848 Collector-Emitter Voltage 6

0.104. Size:553K cn zre
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BC846/BC847/BC848 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications Marking Mechanical Data BC846A=1A BC846B=1B Small Outline Plastic Package BC847A=

0.105. Size:3444K cn twgmc
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BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC846 THRU BC850 BC8 46 THRU BC8 50 TRANSISTOR(NPN) FEATURE Low current (max. 100 mA) SOT-23 Low voltage (max. 65 V). 1 BASE APPLICATIONS 2 EMITTER General purpose switching and amplification. 3 COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements BC856 /857/858/859/86

0.106. Size:303K cn yangzhou yangjie elec
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RoHS RoHS COMPLIANT COMPLIANT BC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage 80 BC84

0.107. Size:211K cn yangzhou yangjie elec
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RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J

0.108. Size:302K cn yangzhou yangjie elec
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RoHS RoHS COMPLIANT COMPLIANT BC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL

0.109. Size:455K cn doeshare
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BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE

0.110. Size:158K cn fosan
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846 BC847 BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B, BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V

0.111. Size:221K cn fosan
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD BC846/847/848 MAXIMUM RATINGS Characteristic Symbol Unit (BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage

0.112. Size:637K cn hottech
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BC848 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to BC858 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe

0.113. Size:255K cn hottech
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Plastic-Encapsulate Transistors FEATURES (NPN) BC846A/B For general AF applications (NPN) BC847A/B/C High collector current (NPN) BC848A/B/C High current gain Low collector-emitter saturation voltage Marking BC846A BC846B BC847A BC847B 1A 1B 1E 1F BC847C BC848A BC848B BC848C 1. BASE 2. EMITTER SOT-23 1G 1J 1K 1L 3. COLLECTO MAXIMUM RATINGS (TA=25 unless otherwise noted) Par

0.114. Size:2559K cn xch
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BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 A Dim Min Max DEVICE MARKING C A 0.37 0.51 BC846A=1A; BC846B=1B; B C B 1.20 1.40 BC847A=1E; BC847B=1F; BC847C=1G; C 2.30 2.50 TOP VIEW B E BC848A=1J; BC848B=1K BC848C=1L D 0.89 1.03 D E

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