Справочник транзисторов. BC856BLT1

 

Биполярный транзистор BC856BLT1 Даташит. Аналоги


   Наименование производителя: BC856BLT1
   Маркировка: 3B
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Ёмкость коллекторного перехода (Cc): 6 pf
   Статический коэффициент передачи тока (hfe): 290
   Корпус транзистора: SOT23
 

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BC856BLT1 Datasheet (PDF)

 0.1. Size:148K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858blt3g bc859blt1g bc859clt1g.pdfpdf_icon

BC856BLT1

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 0.2. Size:209K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdfpdf_icon

BC856BLT1

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 0.3. Size:801K  onsemi
bc856blt1g bc857clt3g bc856blt3g bc857blt1g bc857blt3g bc858blt3g bc858alt1g bc857clt1g.pdfpdf_icon

BC856BLT1

BC856ALT1G Series,SBC856ALT1G SeriesGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comFeatures S and NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTER3MAXIMUM RATINGS

 0.4. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdfpdf_icon

BC856BLT1

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ET6001

 

 
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