BC858AWT1 - описание и поиск аналогов

 

BC858AWT1. Аналоги и основные параметры

Наименование производителя: BC858AWT1

Маркировка: 3J

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.3 W

Макcимально допустимое напряжение коллектор-база (Ucb): 30 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 300 MHz

Ёмкость коллекторного перехода (Cc): 6 pf

Статический коэффициент передачи тока (hFE): 180

Корпус транзистора: SOT323

 Аналоги (замена) для BC858AWT1

- подборⓘ биполярного транзистора по параметрам

 

BC858AWT1 даташит

 0.1. Size:81K  onsemi
bc858awt1g bc856bwt1g.pdfpdf_icon

BC858AWT1

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 0.2. Size:143K  onsemi
bc856bwt1 bc857bwt1 bc858awt1-series.pdfpdf_icon

BC858AWT1

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http //onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC--70/SOT--323 which is designed for low power surface mount applications. 1 BASE Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2

 0.3. Size:78K  onsemi
bc856bwt1g bc857bwt1g bc857cwt1g bc858awt1g bc858bwt1g.pdfpdf_icon

BC858AWT1

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

 0.4. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdfpdf_icon

BC858AWT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

Другие транзисторы: BC857CW, BC857CWT1, BC857S, BC858, BC858A, BC858ALT1, BC858AR, BC858AW, 13009, BC858B, BC858BLT1, BC858BR, BC858BW, BC858BWT1, BC858C, BC858CLT1, BC858CR

 

 

 

 

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