BC636; BCP51; BCX5145 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC636[2] SOT54 SC-43A TO-92 BC635BCP51 SOT223 SC-73 - BCP54BCX51 SOT89 SC-62 TO-243 BCX54[1] Valid for all available

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP51; BCP52; BCP53PNP medium power transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BCP51; BCP52; BCP53FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 base Medium power (m

BCP51PNP General Purpose Amplifier4 This device is designed for general purpose medium power amplifiers and switches requiring collecor currents to 1.0A. Sourced from process 77. 321SOT-2231. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -45 VVCBO Collector-Base V

BCP51; BCX51; BC51PA45 V, 1 A PNP medium power transistorsRev. 9 13 October 2011 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package NPN complementNexperia JEITA JEDECBCP51 SOT223 SC-73 - BCP54BCX51 SOT89 SC-62 TO-243 BCX54BC51PA SO

PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 54 BCP 56 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCP 51 BCP 51 Q62702-C2107 B C E C SOT-223BCP 51-10 BCP 51-10 Q62702-C2109BCP 51-16 BCP 51-16 Q62702-C2110BCP 52

SOT223 PNP SILICON PLANARBCP51MEDIUM POWER TRANSISTORISSUE 3 AUGUST 1995 T i I i C i II V T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i

BCP51...-BCP53...PNP Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54 ... BCP56 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCP51 * 1=B 2=C 3=E 4=C - - SOT223 BCP51-16 * 1=B 2=C 3=E 4=C - - SOT223 BC

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS BCP51 BCP52 BCP53SOT-223Formed SMD PackageGeneral Purpose Medium Power DC ApplicationsComplementary BCP54 BCP55 and BCP56ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BCP51 BCP52 BCP53 UNITSCollector Base Voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol

BCP51,52,53SOT-223 Transistor(PNP)SOT-2231. BASE 2. COLLECTOR 1 3. EMITTER Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter BCP51 BCP52 BCP53 Units VCBO

SMD Type TransistorsPNP TransistorsBCP51,BCP52,BCP53(KCP51,KCP52,KCP53)Unit:mmSOT-2236.500.2 Features3.000.1 For AF driver and output stages4 High collector current Low collector-emitter saturation voltage Complementary to BCP54,BCP55,BCP561 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collecto

SMD Type TransistorsPNP TransistorsBCP51,BCP52,BCP53(KCP51,KCP52,KCP53)Unit:mmSOT-2236.500.2 Features3.000.1 For AF driver and output stages4 High collector current Low collector-emitter saturation voltage Complementary to BCP54,BCP55,BCP561 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collecto

BCP51-BCP53 TRANSISTOR (PNP) SOT-223 FEATURES For AF driver and output stages 1 High collector current Low collector-emitter saturation voltage 1. BASE Complementary types: BCP54...BCP56 (NPN)2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter BCP51 BCP52 BCP53 Units VCBO Collector-Base Voltage -45 -60 -100 V VCEO Collect

BCP51T series45 V, 1 A PNP medium power transistorsRev. 1 29 April 2019 Product data sheet1. Product profile1.1. General descriptionPNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBCP51T SOT223 SC-73 BCP54TBCP51-10T BCP54-10TBCP51-16T BCP54

BCP 51M ... BCP 53MPNP Silicon AF Transistor4 For AF driver and output stages5 High collector current Low collector-emitter saturation voltage3 Complementary types: BCP 54M...BCP 56M(NPN)21VPW05980Type Marking Ordering Code Pin Configuration PackageBCP 51M AAs Q62702-C2592 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595BCP 52M AEs Q62702-C2593 BCP 53M AHs Q62702

BCP 51/ 52/ 53 PNP MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > -45V, -60V & -80V Case: SOT223 IC = -1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = -2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Sa

www.msksemi.comBCP51 BCP52 BCP53Semiconductor CompianceSemiconductor Compiance BCP51,52,53 TRANSISTOR (PNP) SOT-223 FEATURES 1 For AF driver and output stages 1. BASE High collector current 22. COLLECTOR Low collector-emitter saturation voltage 33. EMITTER Complementary types: BCP54...BCP56 (NPN) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol